S-13A1C00-U5T1U3

Basic Information Overview

• Category: Electronic Component
• Use: Power Amplifier
• Characteristics:
  • High power output
  • Wide frequency range
  • Low distortion
• Package: TO-220
• Essence: Transistor
• Packaging/Quantity: Individual, 100 pieces per box

Specifications

• Maximum Power Dissipation: 50W
• Collector-Emitter Voltage: 60V
• Collector Current: 10A
• DC Current Gain (hFE): 40-250
• Transition Frequency (fT): 30MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The S-13A1C00-U5T1U3 transistor has three pins: 1. Base (B) 2. Collector (C) 3. Emitter (E)

Functional Features

• High power amplification capability
• Suitable for audio and RF applications
• Low noise and distortion
• Fast switching speed
• Stable performance over a wide temperature range

Advantages

• High power output allows for driving large loads
• Wide frequency range enables versatile applications
• Low distortion ensures accurate signal reproduction
• TO-220 package provides easy mounting and heat dissipation

Disadvantages

• Limited maximum voltage and current ratings compared to some other power transistors
• Relatively high cost compared to lower power alternatives

Working Principles

The S-13A1C00-U5T1U3 operates based on the principles of bipolar junction transistor (BJT). It consists of three layers of semiconductor material - P-type, N-type, and P-type. The middle layer acts as the base, while the outer layers serve as the collector and emitter. By applying a small current at the base terminal, a larger current can be controlled between the collector and emitter, allowing for amplification.

Detailed Application Field Plans

The S-13A1C00-U5T1U3 transistor finds applications in various fields, including: 1. Audio Amplifiers: Provides high power output for driving speakers. 2. RF Amplifiers: Used in radio frequency circuits for signal amplification. 3. Power Supplies: Enables voltage regulation and power control. 4. Motor Control: Facilitates precise control of motor speed and direction. 5. Lighting Systems: Used in dimming circuits and LED drivers.

Detailed and Complete Alternative Models

1. S-13B1C00-U5T1U3: Similar specifications with a higher maximum power dissipation of 75W.
2. S-13A1C00-U5T2U3: Lower DC current gain (hFE) range but higher transition frequency (fT) of 50MHz.
3. S-13A1C00-U5T1U4: Higher collector-emitter voltage rating of 80V.

(Note: These alternative models are provided as examples and may not cover all available options.)

This entry provides an overview of the S-13A1C00-U5T1U3 transistor, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models. With its high power output, wide frequency range, and low distortion, this transistor is suitable for various electronic applications requiring power amplification.