S-13A1C34-E6T1U3

Basic Information Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: SMD (Surface Mount Device)
Essence: Transistor
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Type: NPN Bipolar Junction Transistor
• Collector-Base Voltage (Vcbo): 30V
• Collector-Emitter Voltage (Vceo): 20V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 100mA
• Power Dissipation (Pd): 250mW
• Transition Frequency (ft): 150MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The S-13A1C34-E6T1U3 transistor has a total of three pins. The pin configuration is as follows:

1. Pin 1: Collector (C)
2. Pin 2: Base (B)
3. Pin 3: Emitter (E)

Functional Features

• High gain amplification of weak signals
• Low noise performance for improved signal quality
• Suitable for small-signal amplification applications
• Compact SMD package for space-constrained designs
• Wide operating temperature range for versatile usage

Advantages and Disadvantages

Advantages: - High gain allows for effective signal amplification - Low noise ensures minimal distortion in amplified signals - Small form factor enables integration into compact electronic devices - Wide operating temperature range provides flexibility in various environments

Disadvantages: - Limited maximum collector current may restrict certain high-power applications - Lower power dissipation compared to some alternative models

Working Principles

The S-13A1C34-E6T1U3 is an NPN bipolar junction transistor. It operates based on the principles of amplification and control of electrical current. When a small input signal is applied to the base terminal, it controls the flow of current between the collector and emitter terminals. The transistor amplifies the input signal, allowing for larger output signals.

Detailed Application Field Plans

The S-13A1C34-E6T1U3 transistor finds applications in various fields, including:

1. Audio Amplification: Used in audio equipment such as amplifiers and receivers to amplify weak audio signals.
2. Communication Systems: Employed in radio frequency (RF) circuits for signal amplification and modulation.
3. Sensor Interfaces: Utilized in sensor circuits to amplify weak sensor signals for further processing.
4. Medical Devices: Integrated into medical equipment for signal amplification in diagnostic and monitoring applications.

Detailed and Complete Alternative Models

1. S-13A1C34-E6T1U2

   • Similar specifications and pin configuration
   • Lower transition frequency (ft: 100MHz)
   • Suitable for applications with lower frequency requirements

2. S-13A1C34-E6T1U4

   • Similar specifications and pin configuration
   • Higher transition frequency (ft: 200MHz)
   • Suitable for applications requiring higher frequency response

3. S-13A1C34-E6T1U5

   • Similar specifications and pin configuration
   • Higher power dissipation (Pd: 500mW)
   • Suitable for applications with higher power requirements

4. S-13A1C34-E6T1U6

   • Similar specifications and pin configuration
   • Lower gain but higher maximum collector current (Ic: 200mA)
   • Suitable for applications requiring higher current handling capacity

(Note: The above alternative models are for illustrative purposes and may not represent actual products.)

In conclusion, the S-13A1C34-E6T1U3 is a high-gain, low-noise NPN transistor used for signal amplification in various electronic applications. Its compact size, wide operating temperature range, and reliable performance make it suitable for diverse industries.