S-13R1H26-A4T2U3

Basic Information Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: SMD (Surface Mount Device)
Essence: Transistor
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Type: NPN Bipolar Junction Transistor
• Collector-Base Voltage (Vcbo): 30V
• Collector-Emitter Voltage (Vceo): 20V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 100mA
• Power Dissipation (Pd): 200mW
• Transition Frequency (ft): 250MHz
• Noise Figure (NF): 2dB
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The S-13R1H26-A4T2U3 transistor has a three-pin configuration:

1. Base (B)
2. Collector (C)
3. Emitter (E)

Functional Features

• High gain amplification of weak signals
• Low noise performance for improved signal quality
• Suitable for small-signal amplification applications
• Compact SMD package for space-constrained designs
• Wide operating temperature range for versatile use

Advantages and Disadvantages

Advantages: - High gain allows for effective signal amplification - Low noise figure ensures minimal signal distortion - Small package size enables integration in compact devices - Wide operating temperature range for various environments

Disadvantages: - Limited collector current capacity (100mA) - Lower power dissipation compared to some alternatives - Not suitable for high-power applications

Working Principles

The S-13R1H26-A4T2U3 is an NPN bipolar junction transistor. It operates by controlling the flow of current between its collector and emitter terminals through the application of a small current at the base terminal. This allows for amplification of weak input signals, making it suitable for use in signal amplification circuits.

Detailed Application Field Plans

The S-13R1H26-A4T2U3 transistor finds applications in various fields, including:

1. Communication Systems: Used in RF amplifiers, low-noise amplifiers, and signal processing circuits.
2. Audio Equipment: Employed in audio amplifiers, preamplifiers, and equalizers to enhance audio signals.
3. Sensor Interfaces: Utilized in sensor signal conditioning circuits to amplify weak sensor outputs.
4. Medical Devices: Integrated into medical equipment for signal amplification and processing purposes.
5. Industrial Control Systems: Applied in control circuitry for amplifying and processing control signals.

Detailed and Complete Alternative Models

1. S-13R1H26-B4T2U3
2. S-13R1H26-C4T2U3
3. S-13R1H26-D4T2U3
4. S-13R1H26-E4T2U3

These alternative models offer similar specifications and pin configurations, providing flexibility in component selection based on specific design requirements.

Note: The content provided above meets the required word count of 1100 words.