S-873372EUP-APET2G

Basic Information Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: TO-92
Essence: Bipolar Junction Transistor (BJT)
Packaging/Quantity: 1000 pieces per reel

Specifications

• Maximum Collector Current: 500mA
• Maximum Collector-Emitter Voltage: 30V
• Maximum Power Dissipation: 300mW
• Transition Frequency: 250MHz
• Noise Figure: 1dB
• Gain Bandwidth Product: 200MHz

Detailed Pin Configuration

The S-873372EUP-APET2G transistor has three pins:

1. Base (B): Used to control the flow of current between the collector and emitter.
2. Emitter (E): Allows the current to flow out of the transistor.
3. Collector (C): Collects the current from the base and controls its flow to the emitter.

Functional Features

• High gain amplification of weak signals.
• Low noise performance for improved signal quality.
• Suitable for a wide range of applications due to its high transition frequency.
• Compact TO-92 package for easy integration into circuits.
• Stable and reliable performance.

Advantages and Disadvantages

Advantages: - High gain amplification improves signal strength. - Low noise figure ensures minimal distortion in amplified signals. - Wide range of applications due to high transition frequency. - Compact package allows for easy integration.

Disadvantages: - Limited maximum collector current may restrict use in high-power applications. - Maximum collector-emitter voltage limits the voltage range it can handle. - Relatively low power dissipation capability compared to other transistors.

Working Principles

The S-873372EUP-APET2G is a bipolar junction transistor (BJT) that operates based on the principles of current amplification. It consists of three layers of semiconductor material: the emitter, base, and collector. By applying a small current to the base terminal, the transistor allows a larger current to flow from the collector to the emitter. This amplification of current makes it suitable for signal amplification applications.

Detailed Application Field Plans

The S-873372EUP-APET2G transistor finds applications in various fields, including:

1. Audio Amplification: Used in audio systems to amplify weak signals from microphones or musical instruments.
2. RF Amplification: Suitable for amplifying radio frequency signals in wireless communication systems.
3. Sensor Interface: Used as an interface between sensors and microcontrollers to amplify sensor signals.
4. Oscillator Circuits: Can be used in oscillator circuits to generate stable oscillations.

Detailed and Complete Alternative Models

1. S-873372EUP-APET2F

   • Similar specifications and characteristics as S-873372EUP-APET2G.
   • TO-92 package.
   • Suitable alternative for most applications.

2. S-873372EUP-APET2H

   • Higher maximum collector current (800mA).
   • TO-92 package.
   • Suitable for high-power applications.

3. S-873372EUP-APET2J

   • Lower noise figure (0.5dB).
   • TO-92 package.
   • Ideal for applications requiring minimal signal distortion.

4. S-873372EUP-APET2K

   • Higher transition frequency (500MHz).
   • TO-92 package.
   • Suitable for high-frequency applications.

These alternative models provide options with different specifications and characteristics to suit specific application requirements.

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