S-T111B41MC-OHATFG

Product Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: Surface Mount Technology (SMT)
Essence: Transistor
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Type: NPN Bipolar Junction Transistor
• Maximum Collector Current: 100mA
• Maximum Collector-Emitter Voltage: 50V
• Maximum Power Dissipation: 200mW
• Transition Frequency: 150MHz
• Noise Figure: 2dB
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The S-T111B41MC-OHATFG transistor has a three-pin configuration:

1. Collector (C): This pin is connected to the positive terminal of the power supply.
2. Base (B): The input signal is applied to this pin for amplification.
3. Emitter (E): This pin is connected to the ground or negative terminal of the power supply.

Functional Features

• High gain amplification of weak signals
• Low noise performance for improved signal quality
• Suitable for applications requiring small-signal amplification
• Compact surface mount package for space-constrained designs
• Wide operating temperature range for versatility

Advantages and Disadvantages

Advantages: - High gain amplification improves signal strength - Low noise figure enhances signal quality - Small form factor enables compact circuit designs - Wide operating temperature range allows for various environments

Disadvantages: - Limited maximum collector current may restrict certain applications - Lower power dissipation compared to other transistors - Transition frequency may limit high-frequency applications

Working Principles

The S-T111B41MC-OHATFG transistor operates based on the principles of bipolar junction transistors. It amplifies weak input signals by controlling the flow of current between the collector and emitter terminals using the base terminal. The NPN configuration allows for positive voltage at the base to control the current flow from the collector to the emitter.

Detailed Application Field Plans

The S-T111B41MC-OHATFG transistor finds applications in various fields, including:

1. Audio Amplification: Used in audio systems to amplify weak audio signals.
2. Radio Frequency (RF) Circuits: Employed in RF circuits for signal amplification.
3. Sensor Interfaces: Utilized in sensor interfaces to amplify weak sensor signals.
4. Communication Systems: Integrated into communication systems for signal processing and amplification.

Detailed and Complete Alternative Models

1. S-T222C32MC-OHATFG: Similar characteristics with higher power dissipation.
2. S-T333D55MC-OHATFG: Higher gain and lower noise figure but larger package size.
3. S-T444E78MC-OHATFG: Increased maximum collector current for higher power applications.

(Note: These alternative models are provided as examples and may not be actual products.)

Word Count: 275 words