BD242C-S

Product Overview

Belongs to: Semiconductor Devices
Category: Power Transistor
Use: Amplification and Switching
Characteristics: High power dissipation, high current capability
Package: TO-220AB
Essence: Silicon NPN transistor
Packaging/Quantity: Bulk packaging, quantity varies

Specifications

• Collector-Emitter Voltage (VCEO): 100V
• Collector Current (IC): 3A
• Total Power Dissipation (PTOT): 65W
• Transition Frequency (fT): 2MHz
• Operating Temperature Range: -65°C to 150°C

Detailed Pin Configuration

1. Base (B)
2. Emitter (E)
3. Collector (C)

Functional Features

• High voltage capability
• Fast switching speed
• Low collector-emitter saturation voltage

Advantages and Disadvantages

Advantages: - Suitable for high power applications - Fast response time - Low saturation voltage

Disadvantages: - Sensitive to overvoltage spikes - Requires careful handling due to static sensitivity

Working Principles

The BD242C-S operates as a typical NPN transistor, where the flow of current is controlled by the base terminal. When a small current is applied to the base, it allows a larger current to flow from the collector to the emitter, enabling amplification and switching functions.

Detailed Application Field Plans

The BD242C-S is commonly used in audio amplifiers, power supply circuits, and motor control applications due to its high power dissipation and current capability. It is also utilized in voltage regulators and electronic ballasts.

Detailed and Complete Alternative Models

1. BD243C-S
2. TIP31C
3. 2N3055

This list is not exhaustive and there are several alternative models available with similar specifications and characteristics.

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This content provides a comprehensive overview of the BD242C-S semiconductor device, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.