CY62136VNLL-70ZSXET

Product Overview

Category

CY62136VNLL-70ZSXET belongs to the category of static random-access memory (SRAM) chips.

Use

This product is primarily used as a high-speed, low-power memory solution in various electronic devices and systems.

Characteristics

• High speed: The CY62136VNLL-70ZSXET offers fast access times, allowing for efficient data retrieval.
• Low power consumption: It operates at low voltage levels, minimizing power consumption and extending battery life.
• Non-volatile storage: The SRAM retains data even when power is disconnected, ensuring data integrity.
• Small form factor: The chip is compact and suitable for integration into space-constrained designs.

Package

The CY62136VNLL-70ZSXET is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to provide reliable and efficient memory storage in electronic devices.

Packaging/Quantity

The CY62136VNLL-70ZSXET is typically packaged in reels or tubes, with a quantity of 2500 units per reel/tube.

Specifications

• Operating voltage: 2.7V - 3.6V
• Access time: 70 ns
• Memory capacity: 4 Mb (512K x 8 bits)
• Operating temperature range: -40°C to +85°C
• Standby current: 1 µA (typical)
• Active current: 10 mA (typical)

Detailed Pin Configuration

The CY62136VNLL-70ZSXET has a total of 32 pins, which are assigned specific functions as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. CE#
11. OE#
12. WE#
13. I/O0
14. I/O1
15. I/O2
16. I/O3
17. I/O4
18. I/O5
19. I/O6
20. I/O7
21. VSS
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC

Functional Features

• Random access: The CY62136VNLL-70ZSXET allows for random access to any memory location, enabling efficient data retrieval.
• Low power operation: It operates at low voltage levels and consumes minimal power, making it suitable for battery-powered devices.
• Non-volatile storage: The SRAM retains data even when power is disconnected, ensuring data integrity.
• High-speed operation: With a fast access time of 70 ns, the chip enables quick data read/write operations.

Advantages and Disadvantages

Advantages

• High-speed performance
• Low power consumption
• Non-volatile storage
• Compact form factor

Disadvantages

• Limited memory capacity compared to other memory technologies
• Relatively higher cost per bit compared to other memory types

Working Principles

The CY62136VNLL-70ZSXET utilizes static random-access memory technology, which stores each bit of data in a flip-flop circuit. This allows for fast access times and low power consumption. The chip uses a combination of transistors and capacitors to store and retrieve data.

Detailed Application Field Plans

The CY62136VNLL-70ZSXET finds applications in various electronic devices and systems, including but not limited to: - Mobile phones - Tablets - Digital cameras - Portable media players - Networking equipment - Industrial control systems

Detailed and Complete Alternative Models

1. CY62136VLL-70ZSXET: Similar to the CY62136VNLL-70ZSXET, but with a lower operating voltage range of 2.5V - 3.6V.
2. CY62136EV30LL-45BVXI: Offers a higher memory capacity of 8 Mb (1M x 8 bits) and operates at a lower voltage range of 1.7V - 1.95V.

These alternative models provide options with different specifications to suit specific application requirements.

In conclusion, the CY62136VNLL-70ZSXET is a high-speed, low-power SRAM chip that offers reliable memory storage for various electronic devices. Its compact size, non-volatile storage capability, and efficient performance make it a suitable choice for many applications. However, its limited memory capacity and relatively higher cost per bit should be considered when selecting alternatives.