CY62146GE-45ZSXIT

Product Overview

Category

CY62146GE-45ZSXIT belongs to the category of synchronous SRAM (Static Random Access Memory) integrated circuits.

Use

This product is primarily used as a high-speed memory solution in various electronic devices and systems.

Characteristics

• High-speed operation: The CY62146GE-45ZSXIT offers fast access times, allowing for efficient data retrieval.
• Low power consumption: This integrated circuit is designed to minimize power usage, making it suitable for battery-powered devices.
• Small form factor: The compact package size enables space-saving integration into electronic designs.
• Reliable performance: The CY62146GE-45ZSXIT ensures stable and consistent operation, meeting the demands of critical applications.

Package

The CY62146GE-45ZSXIT is available in a surface-mount 48-ball VFBGA (Very Fine Pitch Ball Grid Array) package.

Essence

The essence of this product lies in its ability to provide high-speed and low-power memory storage for electronic devices.

Packaging/Quantity

The CY62146GE-45ZSXIT is typically supplied in reels, with each reel containing a specific quantity of integrated circuits. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Operating Voltage: 2.5V - 3.6V
• Access Time: 10 ns
• Organization: 1M x 16 bits
• Standby Current: 1 µA (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The CY62146GE-45ZSXIT features a 48-ball VFBGA package with the following pin configuration:

1. VDD
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. DQ8
27. DQ9
28. DQ10
29. DQ11
30. DQ12
31. DQ13
32. DQ14
33. DQ15
34. /WE
35. /OE
36. /UB
37. /LB
38. /CE1
39. /CE2
40. /CE3
41. /CE4
42. /CE5
43. /CE6
44. /CE7
45. VSS
46. VSS
47. VSS
48. VDDQ

Functional Features

• High-speed synchronous operation: The CY62146GE-45ZSXIT synchronizes data transfers with an external clock, enabling efficient and reliable communication.
• Byte write capability: This integrated circuit supports byte-level write operations, allowing for flexible data manipulation.
• Automatic power-down: The CY62146GE-45ZSXIT features a power-down mode that reduces power consumption when the device is not in use.
• Output enable control: The /OE pin enables or disables the output buffers, providing control over data access.

Advantages and Disadvantages

Advantages

• Fast access times ensure quick data retrieval.
• Low power consumption extends battery life in portable devices.
• Small form factor enables space-saving integration.
• Reliable performance ensures stable operation in critical applications.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Higher cost per bit compared to some alternative memory solutions.

Working Principles

The CY62146GE-45ZSXIT operates based on the principles of static random access memory. It stores data in a volatile manner, meaning that the stored information is lost when power is removed. The synchronous design allows for efficient data transfer between the integrated circuit and the external system, synchronized with an external clock signal. This enables fast and reliable data access and manipulation.

Detailed Application Field Plans

The CY62146GE-45ZSXIT finds application in various electronic devices and systems, including but not limited to: - Mobile phones and smartphones - Tablets and portable computing devices - Networking equipment - Industrial control systems - Automotive electronics - Medical devices

Detailed and Complete Alternative Models

1. CY62146EV30LL-45BVXI: A similar synchronous SRAM IC with a lower operating voltage range and extended temperature range.
2. IS61LV25616AL-10TLI: