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CY7C1061G-10ZXIT

CY7C1061G-10ZXIT

Product Overview

Category

The CY7C1061G-10ZXIT belongs to the category of synchronous static random access memory (SRAM) chips.

Use

This product is primarily used in electronic devices and systems that require high-speed and reliable data storage and retrieval capabilities.

Characteristics

  • Synchronous operation: The CY7C1061G-10ZXIT operates synchronously with the system clock, allowing for efficient data transfer.
  • High-speed performance: With a maximum operating frequency of 100 MHz, this SRAM chip offers fast read and write operations.
  • Low power consumption: The CY7C1061G-10ZXIT is designed to minimize power consumption, making it suitable for battery-powered devices.
  • High density: This chip has a capacity of 1 Megabit (128K x 8), providing ample storage space for data.

Package

The CY7C1061G-10ZXIT is available in a compact and industry-standard 32-pin TSOP-II package. This package ensures easy integration into various electronic systems.

Essence

The essence of the CY7C1061G-10ZXIT lies in its ability to provide high-speed and reliable data storage, making it an essential component in many electronic devices.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of CY7C1061G-10ZXIT chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

  • Organization: 128K x 8 bits
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Operating Temperature Range: -40°C to +85°C
  • Standby Current: 5 µA (typical)
  • Package Type: 32-pin TSOP-II

Detailed Pin Configuration

The CY7C1061G-10ZXIT has a total of 32 pins, each serving a specific function. The pin configuration is as follows:

```

Pin Name Description

1 Vcc Power supply voltage 2 NC No connection 3 A12 Address input 4 A7 Address input 5 A6 Address input 6 A5 Address input 7 A4 Address input 8 A3 Address input 9 A2 Address input 10 A1 Address input 11 A0 Address input 12 WE Write Enable 13 OE Output Enable 14 I/O0 Data input/output 15 I/O1 Data input/output 16 I/O2 Data input/output 17 I/O3 Data input/output 18 I/O4 Data input/output 19 I/O5 Data input/output 20 I/O6 Data input/output 21 I/O7 Data input/output 22 GND Ground 23 CE1 Chip Enable 1 24 CE2 Chip Enable 2 25 CE3 Chip Enable 3 26 CE4 Chip Enable 4 27 CE5 Chip Enable 5 28 CE6 Chip Enable 6 29 CE7 Chip Enable 7 30 CE8 Chip Enable 8 31 NC No connection 32 Vcc Power supply voltage ```

Functional Features

  • High-speed operation: The CY7C1061G-10ZXIT offers fast access times, allowing for efficient data transfer.
  • Easy integration: With its industry-standard package and pin configuration, this SRAM chip can be easily integrated into various electronic systems.
  • Low power consumption: The low standby current of the CY7C1061G-10ZXIT ensures minimal power consumption, making it suitable for battery-powered devices.
  • Reliable data storage: This SRAM chip provides reliable data storage capabilities, ensuring data integrity even in demanding applications.

Advantages and Disadvantages

Advantages

  • High-speed operation enables fast data transfer.
  • Low power consumption makes it suitable for battery-powered devices.
  • Easy integration into various electronic systems.
  • Reliable data storage capabilities ensure data integrity.

Disadvantages

  • Limited storage capacity compared to other memory technologies.
  • Relatively higher cost per bit compared to other memory options.

Working Principles

The CY7C1061G-10ZXIT operates based on synchronous static random access memory principles. It stores and retrieves data using a clock signal provided by the system. When the chip is enabled, the address lines are used to specify the location where data needs to be read from or written to. The write enable (WE) and output enable (OE) pins control the read and write operations. Data is

기술 솔루션에 CY7C1061G-10ZXIT 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

Sure! Here are 10 common questions and answers related to the application of CY7C1061G-10ZXIT in technical solutions:

Q1: What is the CY7C1061G-10ZXIT? A1: The CY7C1061G-10ZXIT is a high-speed, low-power, 64K x 16 synchronous static random access memory (SRAM) device.

Q2: What is the operating voltage range for CY7C1061G-10ZXIT? A2: The operating voltage range for CY7C1061G-10ZXIT is typically between 3.0V and 3.6V.

Q3: What is the maximum clock frequency supported by CY7C1061G-10ZXIT? A3: The maximum clock frequency supported by CY7C1061G-10ZXIT is 100 MHz.

Q4: What is the typical access time for CY7C1061G-10ZXIT? A4: The typical access time for CY7C1061G-10ZXIT is 10 ns.

Q5: Can CY7C1061G-10ZXIT be used in battery-powered devices? A5: Yes, CY7C1061G-10ZXIT is designed to operate at low power and can be used in battery-powered devices.

Q6: Is CY7C1061G-10ZXIT compatible with other SRAM devices? A6: Yes, CY7C1061G-10ZXIT is compatible with other industry-standard SRAM devices.

Q7: What is the package type for CY7C1061G-10ZXIT? A7: CY7C1061G-10ZXIT is available in a 44-pin TSOP-II package.

Q8: Can CY7C1061G-10ZXIT be used in industrial applications? A8: Yes, CY7C1061G-10ZXIT is suitable for use in industrial applications due to its wide operating temperature range and reliability.

Q9: Does CY7C1061G-10ZXIT support burst mode operation? A9: No, CY7C1061G-10ZXIT does not support burst mode operation. It is a synchronous SRAM device.

Q10: What are some typical applications of CY7C1061G-10ZXIT? A10: CY7C1061G-10ZXIT can be used in various applications such as networking equipment, telecommunications systems, data storage devices, and embedded systems.

Please note that the answers provided here are general and may vary depending on specific requirements and datasheet specifications.