Cypress Semiconductor Corp
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CY7C1462BV25-250BZXC
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CY7C1462BV25-250BZXC

Product Overview

Category: Integrated Circuit (IC)

Use: The CY7C1462BV25-250BZXC is a high-performance synchronous SRAM (Static Random Access Memory) IC. It is designed for use in various electronic devices and systems that require fast and reliable data storage and retrieval.

Characteristics: - High-speed operation - Low power consumption - Large storage capacity - Easy integration into existing circuitry - Reliable data retention

Package: The CY7C1462BV25-250BZXC comes in a compact BGA (Ball Grid Array) package, which provides excellent thermal performance and allows for efficient space utilization on PCBs (Printed Circuit Boards).

Essence: This IC is an essential component for applications that demand high-speed data access and storage capabilities.

Packaging/Quantity: The CY7C1462BV25-250BZXC is typically sold in reels or trays, with each reel or tray containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the supplier.

Specifications

  • Operating Voltage: 2.5V
  • Speed Grade: 250 MHz
  • Density: 4 Megabits (512K x 8)
  • Organization: 512K words x 8 bits
  • Access Time: 10 ns
  • Interface: Parallel
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The CY7C1462BV25-250BZXC has a total of 48 pins, which are assigned different functions. Here is a detailed pin configuration:

  1. VDDQ
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSSQ
  11. VDDQ
  12. DQ8
  13. DQ9
  14. DQ10
  15. DQ11
  16. DQ12
  17. DQ13
  18. DQ14
  19. DQ15
  20. VSSQ
  21. VDDQ
  22. A0
  23. A1
  24. A2
  25. A3
  26. A4
  27. A5
  28. A6
  29. A7
  30. VSSQ
  31. VDDQ
  32. A8
  33. A9
  34. A10
  35. A11
  36. A12
  37. A13
  38. A14
  39. A15
  40. VSSQ
  41. VDDQ
  42. WE#
  43. OE#
  44. CE#
  45. UB#
  46. LB#
  47. CLK
  48. VSSQ

Functional Features

  • High-speed synchronous operation: The CY7C1462BV25-250BZXC offers fast access times, allowing for quick data retrieval and storage.
  • Low power consumption: This IC is designed to minimize power consumption, making it suitable for battery-powered devices or energy-efficient systems.
  • Easy integration: The parallel interface and compact package enable easy integration into existing circuitry, simplifying the design process.
  • Reliable data retention: The CY7C1462BV25-250BZXC ensures data integrity even in harsh operating conditions, providing reliable storage capabilities.

Advantages and Disadvantages

Advantages: - High-speed operation enables efficient data processing. - Low power consumption prolongs battery life in portable devices. - Easy integration reduces design complexity. - Reliable data retention ensures data integrity.

Disadvantages: - Limited storage capacity compared to other memory technologies. - Higher cost per bit compared to some alternative memory solutions.

Working Principles

The CY7C1462BV25-250BZXC operates based on the principles of synchronous SRAM. It uses a clock signal (CLK) to synchronize data transfers between the IC and the external system. The address lines (A0-A15) specify the memory location to be accessed, while the data lines (DQ0-DQ15) facilitate the transfer of data.

When the chip enable (CE#) signal is active low, the output enable (OE#) signal is active low, and the write enable (WE#) signal is active low, the IC allows read or write operations depending on the control signals applied.

Detailed Application Field Plans

The CY7C1462BV25-250BZXC finds applications in various fields that require high-speed data storage and retrieval capabilities. Some potential application areas include:

  1. Networking equipment: Used for buffering and caching data in routers, switches, and network appliances.
  2. Telecommunications

기술 솔루션에 CY7C1462BV25-250BZXC 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

Sure! Here are 10 common questions and answers related to the application of CY7C1462BV25-250BZXC in technical solutions:

  1. Q: What is the CY7C1462BV25-250BZXC? A: The CY7C1462BV25-250BZXC is a specific model of synchronous SRAM (Static Random Access Memory) manufactured by Cypress Semiconductor.

  2. Q: What is the capacity of the CY7C1462BV25-250BZXC? A: The CY7C1462BV25-250BZXC has a capacity of 4 Megabits (512K x 8 bits).

  3. Q: What is the operating voltage range for the CY7C1462BV25-250BZXC? A: The operating voltage range for this SRAM is typically between 2.375V and 2.625V.

  4. Q: What is the access time of the CY7C1462BV25-250BZXC? A: The access time of this SRAM is 25 ns, meaning it takes approximately 25 nanoseconds to read or write data.

  5. Q: Can the CY7C1462BV25-250BZXC be used in industrial applications? A: Yes, the CY7C1462BV25-250BZXC is suitable for use in industrial applications due to its wide operating temperature range and robust design.

  6. Q: Does the CY7C1462BV25-250BZXC support multiple chip enable signals? A: Yes, this SRAM supports two chip enable signals (CE1 and CE2), allowing for more flexible memory control.

  7. Q: What is the package type of the CY7C1462BV25-250BZXC? A: The CY7C1462BV25-250BZXC comes in a 44-pin TSOP (Thin Small Outline Package) form factor.

  8. Q: Can the CY7C1462BV25-250BZXC operate at high frequencies? A: Yes, this SRAM is designed to operate at high frequencies, making it suitable for applications that require fast data access.

  9. Q: Does the CY7C1462BV25-250BZXC have any power-saving features? A: Yes, this SRAM includes a deep power-down mode and a standby mode to minimize power consumption when not actively accessing data.

  10. Q: What are some typical applications of the CY7C1462BV25-250BZXC? A: The CY7C1462BV25-250BZXC can be used in various applications such as networking equipment, telecommunications systems, industrial control systems, and automotive electronics where reliable and fast memory access is required.

Please note that these answers are general and may vary depending on specific requirements and use cases.