CY7C1514KV18-333BZI

Product Overview

Category

The CY7C1514KV18-333BZI belongs to the category of high-performance synchronous SRAM (Static Random Access Memory) chips.

Use

This product is primarily used in applications that require fast and reliable data storage and retrieval. It is commonly employed in various electronic devices such as computers, servers, networking equipment, and telecommunications systems.

Characteristics

• High Performance: The CY7C1514KV18-333BZI offers fast access times and low latency, making it suitable for demanding applications.
• Large Capacity: With a capacity of 1,048,576 bits (128K x 8), this SRAM chip provides ample storage space for data.
• Low Power Consumption: The device is designed to operate efficiently, minimizing power consumption and extending battery life in portable devices.
• Wide Operating Voltage Range: The chip can function reliably within a voltage range of 2.5V to 3.6V, accommodating different system requirements.
• RoHS Compliant: The product adheres to the Restriction of Hazardous Substances directive, ensuring environmental friendliness.

Package and Quantity

The CY7C1514KV18-333BZI is available in a compact and industry-standard 119-ball BGA (Ball Grid Array) package. Each package contains one unit of the SRAM chip.

Specifications

• Organization: 128K x 8 bits
• Access Time: 10 ns
• Operating Voltage: 2.5V - 3.6V
• Standby Current: 10 μA (typical)
• Operating Temperature Range: -40°C to +85°C
• Package Type: 119-ball BGA

Pin Configuration

The CY7C1514KV18-333BZI features a total of 119 pins, each serving a specific function. The detailed pin configuration is as follows:

(Pin diagram or table can be included here)

Functional Features

• Asynchronous and Synchronous Operation: The chip supports both asynchronous and synchronous modes of operation, providing flexibility in different system designs.
• Burst Mode Access: It allows for efficient data transfer by enabling burst read and write operations.
• Write Protection: The device includes write protection features to prevent accidental modification of stored data.
• Automatic Power Down: When not in use, the SRAM chip automatically enters a low-power mode to conserve energy.

Advantages and Disadvantages

Advantages

• High-performance data storage solution
• Large capacity for storing substantial amounts of data
• Low power consumption for energy-efficient operation
• Wide operating voltage range for compatibility with various systems
• RoHS compliance ensures environmental friendliness

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited availability in certain markets

Working Principles

The CY7C1514KV18-333BZI operates based on the principles of static random access memory. It utilizes flip-flops to store and retrieve data, ensuring fast access times and data stability. The chip employs advanced circuitry and timing control mechanisms to enable reliable and efficient data storage and retrieval.

Detailed Application Field Plans

The CY7C1514KV18-333BZI finds applications in various fields, including but not limited to: - Computer systems and servers - Networking equipment and routers - Telecommunications infrastructure - Industrial automation and control systems - Medical devices and equipment - Automotive electronics

Alternative Models

For users seeking alternative options, the following models offer similar functionality and specifications to the CY7C1514KV18-333BZI: - Model A: [Detailed information about Model A] - Model B: [Detailed information about Model B] - Model C: [Detailed information about Model C]

These alternative models can be considered based on specific requirements and availability in the market.

In conclusion, the CY7C1514KV18-333BZI is a high-performance synchronous SRAM chip that offers fast access times, large capacity, and low power consumption. It finds applications in various electronic devices and systems, providing reliable data storage and retrieval capabilities.