IS29GL01GS-11TFV023

Product Overview

Category

IS29GL01GS-11TFV023 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

IS29GL01GS-11TFV023 is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of IS29GL01GS-11TFV023 lies in its ability to provide reliable and high-speed data storage in a compact package.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of IS29GL01GS-11TFV023 units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Model: IS29GL01GS-11TFV023
• Memory Capacity: 1 gigabit (128 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The pin configuration of IS29GL01GS-11TFV023 is as follows:

1. VCC - Power supply voltage
2. A0-A18 - Address inputs
3. DQ0-DQ15 - Data input/output lines
4. WE# - Write enable
5. CE# - Chip enable
6. OE# - Output enable
7. RY/BY# - Ready/busy status
8. RP# - Reset/program
9. WP#/ACC - Write protect/acceleration
10. VSS - Ground

Functional Features

• High-speed data transfer
• Sector erase and byte programming capabilities
• Automatic program and erase algorithms
• Error correction code (ECC) for data integrity
• Power-saving features such as standby and automatic sleep modes

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Compact size for easy integration
• Low power consumption
• Long data retention period

Disadvantages

• Limited endurance compared to other types of memory
• Relatively higher cost per unit compared to some alternatives

Working Principles

IS29GL01GS-11TFV023 utilizes a combination of electronic circuits and semiconductor technology to store and retrieve digital data. It employs a parallel interface to communicate with the host device, allowing for high-speed data transfer.

The memory cells within IS29GL01GS-11TFV023 are organized into sectors, which can be individually erased or programmed. The device uses specific algorithms to perform these operations accurately and efficiently. Additionally, error correction codes are implemented to ensure data integrity.

Detailed Application Field Plans

IS29GL01GS-11TFV023 finds applications in various electronic devices that require reliable and high-capacity data storage. Some potential application fields include:

1. Smartphones and tablets
2. Digital cameras and camcorders
3. Portable media players
4. Automotive infotainment systems
5. Industrial control systems
6. Medical devices
7. Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to IS29GL01GS-11TFV023 that offer similar functionality and characteristics include:

1. Samsung K9F1G08U0D
2. Micron MT29F1G08ABADAWP
3. Toshiba TC58NVG1S3HTA00

These alternative models can be considered based on specific requirements and compatibility with the target application.

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