IS29GL128S-10TFV013

Product Overview

Category

IS29GL128S-10TFV013 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and digital cameras.

Characteristics

• High storage capacity: The IS29GL128S-10TFV013 offers a storage capacity of 128 gigabits (16 gigabytes), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With a speed rating of 10 nanoseconds, this flash memory device ensures quick and efficient data read and write operations.
• Reliable performance: The IS29GL128S-10TFV013 is known for its high reliability and durability, making it suitable for long-term data storage.
• Low power consumption: This flash memory device is designed to consume minimal power, making it energy-efficient and ideal for portable electronic devices.
• Compact package: The IS29GL128S-10TFV013 is available in a small form factor package, enabling easy integration into various electronic devices.

Packaging/Quantity

The IS29GL128S-10TFV013 is typically packaged in a surface-mount technology (SMT) package. It is commonly available in reels or trays, with quantities varying based on customer requirements.

Specifications

• Manufacturer: Integrated Silicon Solution Inc. (ISSI)
• Model: IS29GL128S-10TFV013
• Memory Type: Flash memory
• Capacity: 128 gigabits (16 gigabytes)
• Speed Rating: 10 nanoseconds
• Interface: Parallel
• Supply Voltage: 3.3 volts
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The IS29GL128S-10TFV013 features a parallel interface with the following pin configuration:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RP#: Ready/Busy status
8. BYTE#: Byte enable control
9. RESET#: Reset control
10. WP#: Write protect control
11. RY/BY#: Ready/Busy output

Functional Features

• High-speed data transfer: The IS29GL128S-10TFV013 offers fast read and write operations, allowing for efficient data transfer between the flash memory and the host device.
• Error correction: This flash memory device incorporates error correction techniques to ensure data integrity and reliability.
• Block erase and program: The IS29GL128S-10TFV013 supports block erase and program operations, enabling selective modification of data stored in specific memory blocks.
• Wear-leveling algorithm: To prolong the lifespan of the flash memory, this device utilizes wear-leveling algorithms that evenly distribute write operations across memory cells.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Limited compatibility with certain older devices that do not support parallel interfaces
• Relatively higher cost compared to lower-capacity flash memory options

Working Principles

The IS29GL128S-10TFV013 operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of data using electrically isolated floating-gate transistors. These transistors can be programmed or erased by applying appropriate voltage levels to specific control pins.

When data is written, the flash memory device applies a high voltage to the selected memory cells, causing electrons to tunnel through the insulating layer and get trapped in the floating gate. This alters the threshold voltage of the transistor, representing the stored data.

During read operations, the flash memory device measures the threshold voltage of each memory cell to determine the stored data. The control pins enable various operations such as write, erase, and read, allowing for efficient data management.

Detailed Application Field Plans

The IS29GL128S-10TFV013 finds application in a wide range of electronic devices, including but not limited to: - Solid-state drives (SSDs) - USB flash drives - Memory cards - Embedded systems - Industrial control systems - Automotive electronics

Its high storage capacity, fast data transfer rate, and reliability make it suitable for demanding applications that require large amounts of non-volatile memory.

Alternative Models

For users seeking alternative options, the following flash memory devices can be considered: - IS29GL064S-10TFI013: 64 gigabit (8 gigabyte) capacity, similar