IS29GL512S-11TFV023

Product Overview

Category

IS29GL512S-11TFV023 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity: The IS29GL512S-11TFV023 offers a storage capacity of 512 megabits (64 megabytes), allowing for ample space to store data.
• Fast data transfer rate: With a high-speed interface, this flash memory device enables quick data transfer between the device and the host system.
• Reliable performance: The IS29GL512S-11TFV023 ensures reliable and consistent performance, making it suitable for critical applications.
• Low power consumption: This flash memory device is designed to consume minimal power, enhancing the battery life of the host device.
• Compact package: The IS29GL512S-11TFV023 comes in a small form factor package, making it easy to integrate into various electronic devices.

Packaging/Quantity

The IS29GL512S-11TFV023 is typically packaged in a surface-mount package. The exact packaging and quantity may vary depending on the manufacturer and customer requirements.

Specifications

• Model: IS29GL512S-11TFV023
• Storage Capacity: 512 megabits (64 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: Surface Mount
• Data Retention: Up to 20 years

Detailed Pin Configuration

The IS29GL512S-11TFV023 has a specific pin configuration that facilitates its integration into electronic devices. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable control
5. CE#: Chip enable control
6. OE#: Output enable control
7. RY/BY#: Ready/busy status output
8. RP#/BYTE#: Reset/byte# control
9. WP#/ACC: Write protect/acceleration control
10. VSS: Ground

Functional Features

• High-speed data transfer: The IS29GL512S-11TFV023 offers fast read and write operations, enabling efficient data transfer between the flash memory and the host system.
• Error correction: This flash memory device incorporates error correction techniques to ensure data integrity and reliability.
• Block erase and program: The IS29GL512S-11TFV023 supports block erase and program operations, allowing for flexible data management.
• Sector protection: Certain sectors of the flash memory can be protected from accidental erasure or modification, enhancing data security.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact package size

Disadvantages

• Limited compatibility with certain older systems that do not support parallel interfaces
• Relatively higher cost compared to lower-capacity flash memory devices

Working Principles

The IS29GL512S-11TFV023 operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of data. The data is stored by trapping electric charges in the floating gate of the memory cell. These charges represent the binary values of the stored data. The flash memory controller manages the reading, writing, and erasing of data in the memory cells.

Detailed Application Field Plans

The IS29GL512S-11TFV023 finds applications in various electronic devices that require non-volatile data storage. Some of the potential application fields include:

1. Smartphones and tablets: The flash memory device can be used to store operating systems, applications, and user data in mobile devices.
2. Digital cameras: It enables the storage of high-resolution photos and videos captured by digital cameras.
3. Portable media players: The IS29GL512S-11TFV023 allows users to store and play their favorite music, videos, and other multimedia content.
4. Industrial control systems: This flash memory device can be utilized for storing critical data in industrial automation and control systems.

Detailed and Complete Alternative Models

1. IS29GL256S-11TFV023: A lower-capacity variant with 256 megabits (32 megabytes) of storage.
2. IS29GL1G0811B: A higher-capacity model offering 1 gigabit (128 megabytes) of storage.
3. IS29GL512S-12TFV023: A similar model with a slightly different operating voltage range.

These alternative models