QMP29GL512P11FFI020

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Compact package size
• Package: Integrated Circuit (IC)
• Essence: Stores digital information in a solid-state format
• Packaging/Quantity: Typically sold individually or in bulk quantities

Specifications

• Model: QMP29GL512P11FFI020
• Capacity: 512 gigabits (64 gigabytes)
• Interface: Parallel NOR Flash
• Voltage Range: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Access Time: 90 nanoseconds (typical)

Detailed Pin Configuration

The QMP29GL512P11FFI020 has a pin configuration as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply Voltage | | 2 | GND | Ground | | 3 | A0-A18 | Address Inputs | | 4 | DQ0-DQ15 | Data Input/Output | | 5 | CE# | Chip Enable | | 6 | OE# | Output Enable | | 7 | WE# | Write Enable | | 8 | RY/BY# | Ready/Busy Status | | 9 | RESET# | Reset Input |

Functional Features

• High-speed data transfer rates
• Reliable data retention
• Erase and program operations at the block level
• Built-in error correction codes (ECC) for data integrity
• Low power consumption
• Support for various read and write modes

Advantages

• Large storage capacity allows for extensive data storage
• High-speed read and write operations enable quick access to stored information
• Compact package size facilitates integration into electronic devices
• Reliable data retention ensures long-term data integrity
• Low power consumption prolongs battery life in portable devices

Disadvantages

• Limited endurance due to the finite number of erase/write cycles
• Relatively higher cost compared to other memory technologies
• Susceptible to data loss in case of power failure during write operations

Working Principles

The QMP29GL512P11FFI020 utilizes a parallel NOR flash architecture. It stores digital information by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is measured to determine the logic state. The device operates by applying appropriate voltages to the pins, enabling read, write, or erase operations.

Detailed Application Field Plans

The QMP29GL512P11FFI020 finds applications in various electronic devices, including: - Solid-state drives (SSDs) - Embedded systems - Automotive electronics - Industrial control systems - Networking equipment

Detailed and Complete Alternative Models

• QMP29GL256P11FFI020: 256 gigabit (32 gigabyte) capacity
• QMP29GL1G0P11FFI020: 1 terabit (128 gigabyte) capacity
• QMP29GL2G0P11FFI020: 2 terabit (256 gigabyte) capacity
• QMP29GL4G0P11FFI020: 4 terabit (512 gigabyte) capacity

(Note: The above alternative models are examples and may not represent the complete range of available options.)

This entry provides an overview of the QMP29GL512P11FFI020 flash memory, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.