QMP29GL512P11TAI010

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Compact package size
• Package: TAI010 (Surface Mount)
• Essence: High-performance flash memory for various applications
• Packaging/Quantity: Available in bulk or reel packaging, quantity depends on customer requirements

Specifications

• Capacity: 512 Megabits (64 Megabytes)
• Interface: Parallel
• Organization: 64 Megabits x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 70 ns (max)
• Erase/Program Suspend/Erase Suspend: Yes
• Burst Mode: Yes
• Write Protection: Hardware protection provided
• Data Retention: 20 years (typical)

Detailed Pin Configuration

The QMP29GL512P11TAI010 has the following pin configuration:

1. VCC - Power supply
2. A0-A18 - Address inputs
3. DQ0-DQ7 - Data inputs/outputs
4. WE# - Write Enable
5. CE# - Chip Enable
6. OE# - Output Enable
7. RP# - Ready/Busy
8. RESET# - Reset
9. BYTE# - Byte/Word mode selection
10. WP# - Write Protect
11. RY/BY# - Ready/Busy output
12. NC - No Connection
13. GND - Ground

Functional Features

• High-speed read and write operations
• Reliable data retention
• Low power consumption
• Easy integration into various electronic devices
• Hardware write protection for data security
• Erase and program suspend/resume functionality

Advantages

• Large storage capacity for data-intensive applications
• High-speed access allows for quick data retrieval
• Compact package size saves space in electronic devices
• Low power consumption extends battery life
• Reliable data retention ensures long-term data integrity

Disadvantages

• Parallel interface may limit compatibility with newer systems using serial interfaces
• Limited erase and program cycles compared to other non-volatile memory technologies
• Higher cost compared to some alternative memory options

Working Principles

The QMP29GL512P11TAI010 is based on NAND flash memory technology. It stores data by trapping electric charges within a floating gate structure. The presence or absence of charges determines the stored data value. To read data, the memory controller applies appropriate voltages to the memory cells and measures the resulting current flow. Writing data involves applying higher voltages to the selected memory cells to either trap or release charges.

Detailed Application Field Plans

The QMP29GL512P11TAI010 can be used in various electronic devices that require non-volatile data storage, such as: - Solid-state drives (SSDs) - Digital cameras - Set-top boxes - Printers - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. QMP29GL256P11TAI010 - 256 Megabit parallel flash memory
2. QMP29GL128P11TAI010 - 128 Megabit parallel flash memory
3. QMP29GL064P11TAI010 - 64 Megabit parallel flash memory
4. QMP29GL032P11TAI010 - 32 Megabit parallel flash memory

These alternative models offer varying capacities to suit different application requirements.

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