QMP29GL512R10TFIR10

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Compact package size
• Package: TFIR10 (Thin Fine-pitch Ball Grid Array)
• Essence: Reliable and efficient flash memory solution
• Packaging/Quantity: Individually packaged, quantity varies based on customer requirements

Specifications

• Model: QMP29GL512R10TFIR10
• Capacity: 512 GB
• Interface: Parallel
• Voltage: 3.3V
• Access Time: 70 ns
• Operating Temperature: -40°C to +85°C
• Endurance: 100,000 program/erase cycles
• Data Retention: Up to 10 years

Detailed Pin Configuration

The QMP29GL512R10TFIR10 flash memory module has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply | | 2 | GND | Ground | | 3 | A0-A18 | Address Inputs | | 4 | DQ0-DQ15 | Data Inputs/Outputs | | 5 | WE# | Write Enable | | 6 | CE# | Chip Enable | | 7 | OE# | Output Enable | | 8 | RP# | Ready/Busy Status | | 9 | RY/BY# | Ready/Busy Output | | 10 | RESET# | Reset Input |

Functional Features

• High-speed data transfer rate
• Efficient program and erase operations
• Error correction and detection mechanisms
• Block locking and unlocking capabilities
• Low power consumption
• Advanced wear-leveling algorithms for extended lifespan

Advantages and Disadvantages

Advantages

• Large storage capacity
• High-speed read and write operations
• Compact package size
• Reliable and durable
• Low power consumption

Disadvantages

• Relatively high cost compared to other memory options
• Limited compatibility with certain devices due to the parallel interface

Working Principles

The QMP29GL512R10TFIR10 flash memory utilizes a parallel interface to communicate with the host device. It stores data in a series of memory cells, which can be electrically programmed and erased. The memory cells are organized into blocks, allowing for efficient data management. When data is written, it is stored in the appropriate memory cells. During read operations, the stored data is retrieved from the memory cells and transferred to the host device.

Detailed Application Field Plans

The QMP29GL512R10TFIR10 flash memory module finds applications in various electronic devices, including: 1. Solid-state drives (SSDs) 2. Digital cameras 3. Mobile phones 4. Tablets 5. Gaming consoles 6. Embedded systems 7. Automotive electronics 8. Industrial control systems

Detailed and Complete Alternative Models

1. QMP29GL256R10TFIR10 - 256 GB capacity, same specifications as QMP29GL512R10TFIR10
2. QMP29GL1T10TFIR10 - 1 TB capacity, same specifications as QMP29GL512R10TFIR10
3. QMP29GL128R10TFIR10 - 128 GB capacity, same specifications as QMP29GL512R10TFIR10
4. QMP29GL64R10TFIR10 - 64 GB capacity, same specifications as QMP29GL512R10TFIR10

These alternative models provide different storage capacities while maintaining the same specifications and compatibility.

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