S29GL01GS11FAIV10 - English Editing Encyclopedia Entry

Product Overview

Category

S29GL01GS11FAIV10 belongs to the category of flash memory devices.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: S29GL01GS11FAIV10 offers a storage capacity of 1 gigabit.
• Fast access times: This flash memory device provides quick read and write speeds.
• Reliable: It has a high endurance and can withstand numerous read/write cycles.
• Compact package: The product is available in a small form factor, making it suitable for space-constrained applications.

Package and Quantity

S29GL01GS11FAIV10 is typically packaged in a surface-mount package, such as a Ball Grid Array (BGA) or Thin Small Outline Package (TSOP). The quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 1 gigabit
• Interface: Parallel or Serial
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: Up to 100,000 cycles

Pin Configuration

The detailed pin configuration of S29GL01GS11FAIV10 can be found in the product datasheet provided by the manufacturer.

Functional Features

• High-speed data transfer: S29GL01GS11FAIV10 offers fast read and write operations, enabling efficient data transfer.
• Error correction: The flash memory device incorporates error correction techniques to ensure data integrity.
• Block erase capability: It supports block erase operations, allowing for efficient management of data storage.
• Low power consumption: S29GL01GS11FAIV10 is designed to minimize power consumption, extending the battery life of portable devices.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access times
• Compact form factor
• Reliable and durable
• Low power consumption

Disadvantages

• Limited erase/program cycles
• Relatively high cost compared to other storage technologies

Working Principles

S29GL01GS11FAIV10 utilizes NAND flash memory technology. It stores data by trapping electrically charged particles within a floating gate structure. When reading data, the stored charges are measured to determine the stored information. During programming or erasing, an electrical charge is applied to modify the trapped charges, allowing for data modification or deletion.

Application Field Plans

S29GL01GS11FAIV10 finds applications in various electronic devices that require non-volatile data storage. Some potential application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Automotive electronics - Industrial control systems

Alternative Models

• S29GL512S10DHI010
• S29GL256S10DHIV20
• S29GL128S10DHI020
• S29GL064S10DHI030

These alternative models offer different storage capacities and specifications, providing flexibility for various application requirements.

In conclusion, S29GL01GS11FAIV10 is a flash memory device with a high storage capacity, fast access times, and reliable performance. It is widely used in electronic devices for data storage purposes. However, it has limitations in terms of erase/program cycles and cost compared to other storage technologies.