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S29GL128N10FAI010

S29GL128N10FAI010

Product Overview

Category

S29GL128N10FAI010 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • Non-volatile: Retains data even when power is turned off.
  • High capacity: Offers a storage capacity of 128 gigabits (16 gigabytes).
  • Fast access time: Provides quick read and write operations.
  • Reliable: Ensures data integrity with built-in error correction mechanisms.
  • Low power consumption: Optimized for energy efficiency.
  • Wide temperature range: Operates reliably in extreme temperature conditions.

Package

S29GL128N10FAI010 is available in a compact surface-mount package, commonly known as a Ball Grid Array (BGA) package. This package type allows for easy integration onto printed circuit boards (PCBs).

Essence

The essence of S29GL128N10FAI010 lies in its ability to store and retrieve large amounts of data reliably and efficiently.

Packaging/Quantity

This product is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package varies but is usually in the range of several hundred to several thousand units.

Specifications

  • Memory Type: NAND Flash
  • Organization: 128Gbit (16GB) x 8 bits
  • Voltage Supply: 2.7V - 3.6V
  • Access Time: 70ns (max)
  • Operating Temperature Range: -40°C to +85°C
  • Interface: Parallel
  • Package Type: BGA

Detailed Pin Configuration

The pin configuration of S29GL128N10FAI010 is as follows:

  1. VCC: Power supply voltage
  2. GND: Ground
  3. A0-A23: Address inputs
  4. DQ0-DQ7: Data input/output lines
  5. WE#: Write enable control
  6. CE#: Chip enable control
  7. OE#: Output enable control
  8. RY/BY#: Ready/Busy status output
  9. WP#/ACC: Write protect or accelerated programming control
  10. RESET#: Reset input

Functional Features

  • High-speed data transfer: S29GL128N10FAI010 supports fast read and write operations, allowing for efficient data transfer.
  • Error correction: Built-in error correction algorithms ensure data integrity and reliability.
  • Block erase capability: The flash memory can be erased in large blocks, enabling efficient management of stored data.
  • Low power consumption: Designed to minimize power usage, making it suitable for battery-powered devices.
  • Extended temperature range: Can operate reliably in extreme temperature conditions, expanding its application possibilities.

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast access time
  • Reliable data retention
  • Low power consumption
  • Wide temperature range operation

Disadvantages

  • Higher cost compared to other types of memory
  • Limited endurance (number of erase/write cycles)

Working Principles

S29GL128N10FAI010 utilizes NAND flash memory technology. It stores data by trapping electric charges in a floating gate structure within the memory cells. These charges represent binary information (0s and 1s). To read data, the charges are measured, and the corresponding values are retrieved. Writing data involves applying specific voltage levels to program or erase the memory cells.

Detailed Application Field Plans

S29GL128N10FAI010 finds applications in various electronic devices that require non-volatile data storage. Some common application fields include:

  1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
  2. Digital cameras: Provides storage for high-resolution photos and videos.
  3. Solid-state drives (SSDs): Used as the primary storage medium in computers and servers, offering fast boot times and data access.

Detailed and Complete Alternative Models

  1. S29GL064N90TFI010: 64Gbit NAND flash memory with similar characteristics but lower capacity.
  2. S29GL256P11FFIV20: 256Gbit NAND flash memory with higher capacity and faster access time.
  3. S29GL512S10DHI020: 512Gbit NAND flash memory with larger storage capacity but slightly slower access time.

These alternative models offer different capacities and performance levels to cater to diverse application requirements.

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기술 솔루션에 S29GL128N10FAI010 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

Sure! Here are 10 common questions and answers related to the application of S29GL128N10FAI010 in technical solutions:

  1. Q: What is the S29GL128N10FAI010? A: The S29GL128N10FAI010 is a flash memory device manufactured by Cypress Semiconductor. It has a capacity of 128 megabits and operates at a speed of 10 nanoseconds.

  2. Q: What are the typical applications of S29GL128N10FAI010? A: The S29GL128N10FAI010 is commonly used in various technical solutions such as embedded systems, automotive electronics, industrial control systems, and consumer electronics.

  3. Q: How does S29GL128N10FAI010 connect to a microcontroller or processor? A: The S29GL128N10FAI010 uses a standard parallel interface to connect with microcontrollers or processors. It typically requires address, data, and control lines for communication.

  4. Q: What voltage levels does S29GL128N10FAI010 support? A: The S29GL128N10FAI010 supports a single power supply voltage of 3.0V to 3.6V for both read and write operations.

  5. Q: Can S29GL128N10FAI010 be used for code storage in microcontrollers? A: Yes, the S29GL128N10FAI010 can be used for code storage in microcontrollers. It provides fast access times and high reliability, making it suitable for storing firmware or program code.

  6. Q: Does S29GL128N10FAI010 support in-system programming (ISP)? A: Yes, the S29GL128N10FAI010 supports in-system programming, allowing the device to be programmed or updated while it is connected to the target system.

  7. Q: What is the endurance of S29GL128N10FAI010? A: The S29GL128N10FAI010 has a typical endurance of 100,000 program/erase cycles, ensuring reliable and long-lasting operation.

  8. Q: Can S29GL128N10FAI010 operate in harsh environments? A: Yes, the S29GL128N10FAI010 is designed to operate in a wide temperature range (-40°C to +85°C) and can withstand high levels of shock and vibration, making it suitable for use in harsh environments.

  9. Q: Does S29GL128N10FAI010 support hardware data protection features? A: Yes, the S29GL128N10FAI010 provides hardware data protection features such as block locking and password protection, ensuring the security of stored data.

  10. Q: Are there any development tools available for S29GL128N10FAI010? A: Yes, Cypress Semiconductor provides development tools like programming software, evaluation boards, and technical documentation to assist in the design and integration of S29GL128N10FAI010 into technical solutions.

Please note that these answers are general and may vary depending on specific implementation requirements and datasheet specifications.