S29GL128P11TFI023

Product Overview

Category

S29GL128P11TFI023 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: Offers a storage capacity of 128 gigabits (16 gigabytes).
• High speed: Provides fast read and write operations.
• Reliable: Ensures data integrity with built-in error correction mechanisms.
• Low power consumption: Optimized for energy efficiency.
• Compact package: Comes in a small form factor suitable for integration into compact devices.

Package and Quantity

The S29GL128P11TFI023 flash memory device is typically packaged in a surface-mount package (SOP) or ball grid array (BGA) package. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 128 gigabits (16 gigabytes)
• Interface: Parallel or Serial
• Voltage Range: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 100 megabytes per second (MB/s)
• Erase/Program Cycles: 100,000 cycles (typical)

Pin Configuration

The detailed pin configuration of S29GL128P11TFI023 can be found in the product datasheet provided by the manufacturer. It includes pins for power supply, address lines, data lines, control signals, and other necessary connections.

Functional Features

• High-Speed Read/Write: The S29GL128P11TFI023 offers fast read and write operations, allowing for quick access to stored data.
• Error Correction: Built-in error correction mechanisms ensure data integrity and reliability.
• Block Erase/Program: The flash memory can be erased and programmed in blocks, allowing for efficient management of data.
• Low Power Consumption: Designed with power efficiency in mind, the device minimizes energy consumption during operation.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Reliable data retention
• Low power consumption
• Compact form factor

Disadvantages

• Limited erase/program cycles (100,000 cycles)
• Higher cost compared to lower-capacity flash memory devices

Working Principles

The S29GL128P11TFI023 flash memory device utilizes NAND flash technology. It stores data by trapping electric charges in a grid of memory cells. When reading data, the charges are detected and converted into digital information. During programming or erasing, the trapped charges are manipulated to store or remove data.

Application Field Plans

The S29GL128P11TFI023 flash memory device finds applications in various electronic devices that require high-capacity and reliable data storage. Some potential application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Automotive electronics - Industrial control systems

Alternative Models

There are several alternative models available in the market that offer similar functionality and specifications as the S29GL128P11TFI023 flash memory device. Some notable alternatives include: - S29GL064P11TFI010 - S29GL256P11TFI020 - S29GL512P11TFI030

These alternative models may vary in terms of storage capacity, package type, or other features, providing flexibility for different application requirements.

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