S29GL128P11WGI019

Product Overview

Category

S29GL128P11WGI019 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices, such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High capacity: Offers a storage capacity of 128 gigabits (16 gigabytes).
• High-speed data transfer: Provides fast read and write speeds.
• Reliable: Ensures data integrity with built-in error correction mechanisms.
• Low power consumption: Operates efficiently to conserve battery life.
• Compact package: Comes in a small form factor suitable for integration into compact devices.

Package and Quantity

The S29GL128P11WGI019 flash memory device is typically packaged in a surface-mount package (SOP) or ball grid array (BGA) package. The exact packaging and quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 128 gigabits (16 gigabytes)
• Interface: Parallel or Serial
• Voltage Range: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Speed: Up to 100 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 100,000 cycles

Pin Configuration

The detailed pin configuration of the S29GL128P11WGI019 flash memory device is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A23: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Reset/byte control
9. RY/BY#: Ready/busy status
10. WP#/ACC: Write protect or accelerated programming control
11. VPP: Programming voltage supply

Note: The pin configuration may vary depending on the specific package and manufacturer.

Functional Features

The S29GL128P11WGI019 flash memory device offers the following functional features:

1. High-speed Read/Write Operations: Enables fast data access and transfer.
2. Block Erase/Program: Allows for efficient erasing and programming of data in large blocks.
3. Error Correction Code (ECC): Provides built-in error detection and correction mechanisms to ensure data integrity.
4. Power Management: Supports low-power modes to optimize energy consumption.
5. Security Features: Offers various security measures, such as write protection and lock bits, to protect sensitive data.

Advantages and Disadvantages

Advantages

• Large storage capacity
• High-speed data transfer
• Reliable data retention
• Low power consumption
• Compact form factor

Disadvantages

• Relatively higher cost compared to other storage technologies
• Limited erase/program cycles

Working Principles

The S29GL128P11WGI019 flash memory device utilizes a floating-gate transistor technology. It stores data by trapping electric charges in the floating gate, which alters the transistor's conductive properties. When reading data, the stored charges are detected, allowing retrieval of the stored information. During programming or erasing, high voltages are applied to modify the charge levels in the floating gate, enabling data modification or deletion.

Application Field Plans

The S29GL128P11WGI019 flash memory device finds applications in various fields, including: - Consumer electronics - Automotive systems - Industrial equipment - Networking devices - Medical devices

Alternative Models

Several alternative models with similar specifications and features to the S29GL128P11WGI019 flash memory device include: - S29GL064P11TFI010 - S29GL256P11FFI020 - S29GL512P11FFI030

These alternative models can be considered based on specific project requirements, availability, and cost considerations.

In conclusion, the S29GL128P11WGI019 flash memory device is a high-capacity, high-speed, and reliable storage solution suitable for various electronic applications. Its compact form factor, power efficiency, and built-in error correction mechanisms make it an ideal choice for data storage needs.