S29GL256N11FAIIH0

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Large storage capacity
  • Low power consumption
• Package: Integrated Circuit (IC)
• Essence: Stores digital information in a solid-state format
• Packaging/Quantity: Typically sold in trays or reels containing multiple units

Specifications

• Capacity: 256 Megabits (32 Megabytes)
• Organization: 16-bit wide data bus
• Voltage Range: 2.7V to 3.6V
• Access Time: 90 ns (max)
• Erase Time: 2 ms (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The S29GL256N11FAIIH0 has a total of 48 pins, which are used for various functions such as power supply, data input/output, control signals, and address lines. The pin configuration is as follows:

1. VCC: Power supply voltage
2. VSS: Ground
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write Enable
6. CE#: Chip Enable
7. OE#: Output Enable
8. RP#/BYTE#: Reset/Byte# (optional)
9. RY/BY#: Ready/Busy (optional)

Functional Features

• High-speed read and write operations allow for quick data access.
• Non-volatile memory retains stored data even when power is removed.
• Large storage capacity provides ample space for storing digital information.
• Low power consumption ensures efficient operation and extended battery life.

Advantages

• Fast access times enable rapid data retrieval.
• Non-volatile nature ensures data integrity even during power outages.
• Large storage capacity accommodates a wide range of applications.
• Low power consumption makes it suitable for battery-powered devices.

Disadvantages

• Limited endurance compared to other types of memory.
• Relatively higher cost per unit of storage compared to alternative technologies.
• Susceptible to physical damage from electrostatic discharge (ESD).

Working Principles

The S29GL256N11FAIIH0 utilizes the principles of flash memory technology. It consists of a grid of memory cells, each capable of storing a binary value (0 or 1). These cells are organized into blocks, which can be individually erased and reprogrammed. Data is written to the memory by applying electrical charges to specific cells, while reading involves detecting the presence or absence of charges in the cells.

Detailed Application Field Plans

The S29GL256N11FAIIH0 is widely used in various electronic devices that require non-volatile storage, such as: - Mobile phones - Digital cameras - Portable media players - Solid-state drives (SSDs) - Automotive electronics

Detailed and Complete Alternative Models

• S29GL128N10TFI010: 128 Megabit Flash Memory with similar specifications and features.
• S29GL512N11FFI020: 512 Megabit Flash Memory with higher storage capacity.

Note: The above alternative models are provided for reference and may have different pin configurations and package options.

This entry provides an overview of the S29GL256N11FAIIH0 flash memory, including its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models. With its high-speed operations, large storage capacity, and low power consumption, this flash memory is well-suited for a wide range of electronic devices.