S29GL256P11TFI020D

Product Overview

Category

S29GL256P11TFI020D belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile: The data stored in S29GL256P11TFI020D remains intact even when power is turned off.
• High capacity: It has a storage capacity of 256 gigabits (32 gigabytes).
• Fast access time: Provides quick access to stored data.
• Reliable: Offers high endurance and data retention capabilities.
• Low power consumption: Consumes minimal power during operation.

Package

S29GL256P11TFI020D is available in a compact and standardized package, which ensures compatibility with different devices. The specific package type may vary depending on the manufacturer.

Essence

The essence of S29GL256P11TFI020D lies in its ability to provide reliable and high-capacity data storage in a compact form factor.

Packaging/Quantity

Typically, S29GL256P11TFI020D is packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package can vary, but it is commonly available in quantities of 1 to 10 units.

Specifications

• Memory Type: Flash
• Capacity: 256 gigabits (32 gigabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Access Time: <100 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Package Type: Varies (e.g., TSOP, BGA)

Detailed Pin Configuration

The pin configuration of S29GL256P11TFI020D may vary depending on the package type. Below is a general pin configuration for reference:

1. VCC: Power supply
2. GND: Ground
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output
5. WE#: Write enable
6. CE#: Chip enable
7. OE#: Output enable
8. RP#/BYTE#: Reset/byte select
9. RY/BY#: Ready/busy

Note: The actual pin configuration may differ, and it is recommended to refer to the datasheet provided by the manufacturer for precise details.

Functional Features

• Erase and Program Operations: S29GL256P11TFI020D supports both erase and program operations, allowing users to modify stored data.
• Block Architecture: It is organized into multiple blocks, enabling efficient management of data storage and retrieval.
• Error Correction Code (ECC): Incorporates ECC algorithms to ensure data integrity and reliability.
• Wear-Leveling: Implements wear-leveling techniques to distribute write operations evenly across memory cells, enhancing longevity.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Reliable data retention
• Low power consumption
• Compact form factor

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited endurance (finite number of erase/write cycles)

Working Principles

S29GL256P11TFI020D utilizes flash memory technology, which relies on the movement of electrons within memory cells to store and retrieve data. It employs floating-gate transistors that can trap or release electrons, representing binary states (0s and 1s). The control circuitry manages the read, write, and erase operations, ensuring accurate data storage and retrieval.

Detailed Application Field Plans

S29GL256P11TFI020D finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Embedded systems

Detailed and Complete Alternative Models

1. S29GL128P10TFI020D: 128 gigabit flash memory with similar characteristics and specifications.
2. S29GL512P11TFI020D: 512 gigabit flash memory with higher storage capacity.

Note: The availability of alternative models may vary depending on the manufacturer and market demand.

In conclusion, S29GL256P11TFI020D is a high-capacity flash memory device that offers reliable data storage in various electronic applications. Its fast access time, compact form factor, and low power consumption make it suitable for a wide range of devices. However, it is important to consider the cost and endurance limitations associated with this technology.