S29GL256S90DHI013

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-density storage capacity
  • Fast read and write speeds
  • Low power consumption
• Package: Integrated Circuit (IC)
• Essence: Provides reliable and efficient data storage solution for various electronic devices
• Packaging/Quantity: Typically sold in reels or trays containing multiple units

Specifications

• Manufacturer: Cypress Semiconductor
• Model: S29GL256S90DHI013
• Memory Type: NOR Flash
• Capacity: 256 Megabits (32 Megabytes)
• Organization: 16 M x 16 bits
• Voltage Supply: 2.7V - 3.6V
• Access Time: 90 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Package Type: 48-ball Fine-pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The S29GL256S90DHI013 has a total of 48 pins arranged in a fine-pitch ball grid array package. The pin configuration is as follows:

1. VCCQ - Power supply for I/O buffers
2. DQ0-DQ15 - Data input/output pins
3. A0-A18 - Address input pins
4. WE# - Write Enable
5. CE# - Chip Enable
6. OE# - Output Enable
7. RP# - Reset/Ready
8. BYTE# - Byte Enable
9. RY/BY# - Ready/Busy
10. WP#/ACC - Write Protect/Acceleration
11. VSSQ - Ground for I/O buffers
12. VCC - Power supply for core logic
13. VSS - Ground for core logic

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient data management
• Built-in error correction code (ECC) for enhanced reliability
• Advanced security features to protect stored data
• Low power consumption in standby mode
• Wide operating temperature range for versatile applications

Advantages and Disadvantages

Advantages: - High-density storage capacity allows for large amounts of data to be stored - Fast read and write speeds enable quick data access - Low power consumption prolongs battery life in portable devices - Sector erase capability facilitates efficient data management

Disadvantages: - Limited endurance compared to other non-volatile memory technologies - Higher cost per unit compared to some alternative memory solutions - Relatively larger physical size due to the package type

Working Principles

The S29GL256S90DHI013 operates based on the principles of NOR flash memory technology. It utilizes a grid of memory cells, each capable of storing one or more bits of information. These cells are organized into sectors, which can be individually erased and programmed. When data is written, electrical charges are applied to the memory cells, altering their state to represent the desired information. During read operations, the stored charges are detected and interpreted as data.

Detailed Application Field Plans

The S29GL256S90DHI013 finds application in various electronic devices that require reliable and high-capacity data storage. Some potential application fields include: - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics - Networking equipment

Detailed and Complete Alternative Models

1. S29GL128S90DHI010 - 128 Megabit NOR Flash Memory
2. S29GL512S90DHI020 - 512 Megabit NOR Flash Memory
3. S29GL01GS90DHI030 - 1 Gigabit NOR Flash Memory
4. S29GL02GS90DHI040 - 2 Gigabit NOR Flash Memory

(Note: The list above includes only a few alternative models for reference.)

This concludes the encyclopedia entry for the S29GL256S90DHI013 flash memory.