S29GL512P11TFIV10

Basic Information Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: Non-volatile, high-density, fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Stores data even when power is turned off
• Packaging/Quantity: Typically sold in reels or trays containing multiple ICs

Specifications

• Capacity: 512 Megabits (64 Megabytes)
• Organization: 8-bit parallel interface
• Voltage Range: 2.7V to 3.6V
• Access Time: 90 ns (typical)
• Erase/Program Cycles: 100,000 cycles (minimum)

Detailed Pin Configuration

The S29GL512P11TFIV10 has a total of 56 pins. Here is a brief overview of the pin functions:

• VCC: Power supply voltage
• GND: Ground reference
• A0-A18: Address inputs
• DQ0-DQ7: Data inputs/outputs
• WE#: Write enable control
• CE#: Chip enable control
• OE#: Output enable control
• RP#/BYTE#: Reset/byte enable control
• RY/BY#: Ready/busy status output
• WP#/ACC: Write protect input/acceleration mode control
• RE#/ACC: Read enable input/acceleration mode control

For a detailed pin configuration diagram, please refer to the datasheet provided by the manufacturer.

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient memory management
• Built-in hardware and software protection mechanisms
• Low power consumption during standby and active modes
• Extended temperature range for reliable operation in various environments

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access times - Non-volatile memory retains data even without power - High endurance with 100,000 erase/program cycles

Disadvantages: - Relatively higher cost compared to other storage technologies - Limited write endurance compared to some newer memory technologies

Working Principles

The S29GL512P11TFIV10 is based on the NAND flash memory technology. It stores data by trapping electrons in a floating gate within each memory cell. When a voltage is applied, the trapped charge can be sensed, allowing for data retrieval. To write new data, the floating gate is electrically programmed or erased.

Detailed Application Field Plans

The S29GL512P11TFIV10 is commonly used in various electronic devices that require non-volatile data storage, such as: - Solid-state drives (SSDs) - Digital cameras - Set-top boxes - Networking equipment - Automotive systems

Detailed and Complete Alternative Models

• S29GL256P11TFIV10: 256 Megabit (32 Megabyte) capacity variant
• S29GL01GP11TFIV10: 1 Gigabit (128 Megabyte) capacity variant
• S29GL02GP11TFIV10: 2 Gigabit (256 Megabyte) capacity variant

These alternative models offer different capacities to suit specific application requirements.

(Note: The content provided above is a sample and may not reflect actual specifications or alternative models of S29GL512P11TFIV10. Please refer to the manufacturer's documentation for accurate information.)