S29VS256R0SBHW000

Basic Information Overview

• Category: Semiconductor Memory
• Use: Non-volatile memory for data storage
• Characteristics:
  • High-speed read and write operations
  • Low power consumption
  • Wide operating temperature range
  • Reliable and durable
• Package: BGA (Ball Grid Array)
• Essence: Flash memory chip
• Packaging/Quantity: Single chip in a package

Specifications

• Capacity: 256 Megabits (32 Megabytes)
• Organization: 32M x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Serial Peripheral Interface (SPI)
• Data Retention: Up to 20 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The S29VS256R0SBHW000 has a total of 24 pins. The pin configuration is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. HOLD - Suspends ongoing data transfer
4. WP - Write protect
5. SCK - Serial clock input
6. SI - Serial data input
7. SO - Serial data output
8. CS - Chip select
9. NC - No connection
10. A0-A18 - Address inputs
11. DQ0-DQ7 - Data inputs/outputs

Functional Features

• High-speed read and write operations enable fast data access.
• Low power consumption makes it suitable for battery-powered devices.
• Wide operating temperature range allows usage in various environments.
• Reliable and durable, ensuring data integrity over extended periods.

Advantages

• Fast data transfer speeds enhance overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Wide operating temperature range enables usage in extreme conditions.
• High reliability ensures data integrity and reduces the risk of data loss.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Erase/program cycles are limited, which may affect the lifespan of the chip.
• Higher cost per unit compared to some alternative memory solutions.

Working Principles

The S29VS256R0SBHW000 is based on flash memory technology. It utilizes a floating-gate transistor structure to store data. The memory cells can be electrically programmed and erased, allowing for non-volatile data storage. The Serial Peripheral Interface (SPI) provides a means to communicate with the chip, enabling read, write, and erase operations.

Detailed Application Field Plans

The S29VS256R0SBHW000 is widely used in various electronic devices that require non-volatile memory for data storage. Some common application fields include: - Consumer electronics: smartphones, tablets, digital cameras - Automotive: infotainment systems, navigation systems - Industrial: control systems, data loggers - Medical: patient monitoring devices, diagnostic equipment

Detailed and Complete Alternative Models

1. S25FL256SAGMFI001 - 256 Megabit SPI Flash Memory
2. AT45DB321E-SHN-T - 32 Megabyte DataFlash Memory
3. MX25L3233FM2I-08G - 32 Megabyte Serial Flash Memory
4. W25Q256JVSIQ - 256 Megabit Quad-SPI Flash Memory

These alternative models offer similar capacities and functionalities, providing options for different design requirements.

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