S29WS128N0PBFW012

Product Overview

Category

S29WS128N0PBFW012 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High capacity: The S29WS128N0PBFW012 has a storage capacity of 128 gigabytes.
• Fast access time: It provides quick access to stored data, reducing latency.
• Reliable: This memory device offers high endurance and data retention reliability.
• Low power consumption: It operates efficiently, consuming minimal power.
• Wide temperature range: The S29WS128N0PBFW012 can operate reliably across a wide temperature range.

Package

The S29WS128N0PBFW012 comes in a compact package that ensures easy integration into electronic devices. The specific package type may vary depending on the manufacturer.

Essence

The essence of S29WS128N0PBFW012 lies in its ability to store and retrieve large amounts of data reliably and efficiently.

Packaging/Quantity

The packaging of S29WS128N0PBFW012 typically includes a single unit of the memory device. The quantity may vary based on the manufacturer's specifications.

Specifications

• Storage Capacity: 128 gigabytes
• Interface: Serial or parallel (specific interface depends on the manufacturer)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The pin configuration of S29WS128N0PBFW012 may vary depending on the manufacturer. Please refer to the datasheet provided by the manufacturer for detailed pin configuration information.

Functional Features

• High-speed data transfer: The S29WS128N0PBFW012 offers fast read and write speeds, enabling efficient data transfer.
• Erase and program operations: This memory device supports erase and program operations, allowing users to modify stored data as needed.
• Error correction: It incorporates error correction techniques to ensure data integrity.
• Security features: Some variants of S29WS128N0PBFW012 may include security features like encryption and access control.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast access time
• Reliable data retention
• Low power consumption
• Wide temperature range operation

Disadvantages

• Costly compared to other memory options with lower capacities
• Limited erase/program cycles

Working Principles

The S29WS128N0PBFW012 is based on flash memory technology. It utilizes floating-gate transistors to store and retrieve data. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. These charges can be erased when required, allowing new data to be written.

Detailed Application Field Plans

The S29WS128N0PBFW012 finds applications in various fields, including: 1. Consumer electronics: Used in smartphones, tablets, and digital cameras for data storage. 2. Automotive systems: Employed in infotainment systems, navigation devices, and engine control units. 3. Industrial automation: Utilized in control systems, robotics, and data loggers. 4. Medical devices: Integrated into medical imaging equipment, patient monitoring systems, and diagnostic devices.

Detailed and Complete Alternative Models

1. S29WS064J0PBFW012: 64 gigabytes storage capacity, similar characteristics and specifications.
2. S29WS256N0PBFW012: 256 gigabytes storage capacity, similar characteristics and specifications.
3. S29WS512N0PBFW012: 512 gigabytes storage capacity, similar characteristics and specifications.

These alternative models provide different storage capacities while maintaining similar features and functionality to the S29WS128N0PBFW012.

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