S29XS256RABBHI010

Basic Information Overview

• Category: Semiconductor Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Low power consumption
  • Compact package size
• Package: BGA (Ball Grid Array)
• Essence: Flash memory chip
• Packaging/Quantity: Single chip

Specifications

• Capacity: 256 megabits (32 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

The S29XS256RABBHI010 has a total of 24 pins arranged as follows:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VCC | Power Supply (2.7V - 3.6V) | | 2 | GND | Ground | | 3 | HOLD# | Hold Input | | 4 | WP# | Write Protect Input | | 5 | SIO0 | Serial Data Input/Output 0 | | 6 | SIO1 | Serial Data Input/Output 1 | | 7 | SIO2 | Serial Data Input/Output 2 | | 8 | SIO3 | Serial Data Input/Output 3 | | 9 | SCK | Serial Clock Input | | 10 | CS# | Chip Select Input | | 11-14 | NC | No Connection | | 15-24 | A0-A9 | Address Inputs |

Functional Features

• High-speed data transfer with SPI interface
• Flexible erase and program operations
• Sector-based architecture for efficient memory management
• Hardware and software write protection options
• Power-saving features such as deep power-down mode

Advantages

• Compact package size allows for space-efficient integration into electronic devices
• High-speed read and write operations enable quick data access
• Low power consumption prolongs battery life in portable devices
• Non-volatile memory retains data even when power is disconnected
• Wide operating temperature range makes it suitable for various environments

Disadvantages

• Limited capacity compared to other storage technologies
• Limited erase and program cycles may affect long-term durability
• Relatively higher cost per unit of storage compared to traditional hard drives

Working Principles

The S29XS256RABBHI010 utilizes flash memory technology, which stores data using electrically erasable and programmable transistors. It employs a serial peripheral interface (SPI) for communication with the host device. The memory cells are organized into sectors, allowing for efficient erase and program operations. When data is written, the memory cells are programmed by applying high voltage to store the desired information. Reading data involves sensing the electrical state of the memory cells.

Detailed Application Field Plans

The S29XS256RABBHI010 is commonly used in various electronic devices that require non-volatile data storage, including: - Smartphones and tablets - Digital cameras - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

• S29XS128RABBHI010: 128 megabit version of the same flash memory chip
• S29XS512RABBHI010: 512 megabit version of the same flash memory chip
• S29XS256RABBHI020: Similar flash memory chip with extended temperature range

Note: The above alternative models are provided for reference and may have slight variations in specifications.

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