S34ML01G200BHB000

Basic Information Overview

• Category: Memory Storage Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile memory
  • High capacity (1 Gbit)
  • High-speed data transfer
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: Flash memory chip
• Packaging/Quantity: Single chip

Specifications

• Capacity: 1 Gbit
• Interface: Serial Peripheral Interface (SPI)
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Erase/Program Cycles: 100,000 cycles
• Data Retention: Up to 10 years

Detailed Pin Configuration

The S34ML01G200BHB000 has a total of 48 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Function | |------------|----------|----------| | 1 | VCC | Power Supply (2.7V - 3.6V) | | 2 | GND | Ground | | 3 | HOLD# | Hold Input | | 4 | WP# | Write Protect Input | | 5 | SIO0 | Serial Data Input/Output 0 | | 6 | SIO1 | Serial Data Input/Output 1 | | ... | ... | ... | | 48 | NC | No Connection |

Functional Features

• High-speed data transfer up to 50 MHz
• Advanced wear-leveling algorithm for extended lifespan
• Error correction code (ECC) for data integrity
• Security features like password protection and secure erase
• Flexible block erase and program operations
• Support for software and hardware write protection

Advantages

• Large storage capacity for data-intensive applications
• High-speed data transfer enables quick access to stored information
• Low power consumption prolongs battery life in portable devices
• Secure features protect sensitive data from unauthorized access
• Flexible erase and program operations allow efficient memory management

Disadvantages

• Relatively higher cost compared to traditional storage devices
• Limited number of erase/program cycles may affect lifespan in certain applications
• Requires specialized programming and handling techniques

Working Principles

The S34ML01G200BHB000 is based on NAND flash memory technology. It stores data in a grid of memory cells, which are organized into pages and blocks. The memory cells use floating-gate transistors to trap electric charge, representing binary data as different charge levels. The SPI interface allows the device to communicate with a host controller, enabling data read, write, and erase operations.

Detailed Application Field Plans

The S34ML01G200BHB000 is suitable for various applications, including: 1. Solid-state drives (SSDs) 2. Embedded systems 3. Automotive electronics 4. Industrial control systems 5. Consumer electronics

Detailed and Complete Alternative Models

1. S34ML02G200BHB000 - 2 Gbit capacity
2. S34ML04G200BHB000 - 4 Gbit capacity
3. S34ML08G200BHB000 - 8 Gbit capacity
4. S34ML16G200BHB000 - 16 Gbit capacity

These alternative models offer increased storage capacities while maintaining similar characteristics and functionality.

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