S34ML04G104BHV013

Product Overview

• Category: NAND Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, fast read/write speeds, non-volatile memory
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory solution for high-performance applications
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Capacity: 4GB
• Interface: Toggle Mode 2.0
• Voltage: 3.3V
• Operating Temperature: -40°C to +85°C
• Read Speed: Up to 200MB/s
• Write Speed: Up to 100MB/s
• Endurance: 10,000 Program/Erase cycles
• Data Retention: Up to 10 years

Detailed Pin Configuration

The S34ML04G104BHV013 has a total of 48 pins arranged as follows:

1. VCC
2. VCCQ
3. GND
4. CE#
5. RE#
6. WE#
7. CLE
8. ALE
9. WP#
10. R/B#
11. DQ0
12. DQ1
13. DQ2
14. DQ3
15. DQ4
16. DQ5
17. DQ6
18. DQ7
19. DQS0
20. DQS1
21. DQS2
22. DQS3
23. DM0
24. DM1
25. DM2
26. DM3
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Toggle Mode 2.0 interface for high-speed data transfer
• Advanced Error Correction Code (ECC) for improved data integrity
• Power-on and software reset functions
• Block management for efficient data storage and retrieval
• Wear-leveling algorithm to extend the lifespan of the memory

Advantages and Disadvantages

Advantages: - High capacity allows for storing large amounts of data - Fast read/write speeds enable quick data access - Non-volatile memory retains data even when power is disconnected - Reliable and durable design with high endurance and data retention - Compact BGA package for space-constrained applications

Disadvantages: - Higher cost compared to traditional hard drives or lower-capacity flash memory - Limited number of program/erase cycles before potential degradation - Sensitive to extreme temperatures and voltage fluctuations

Working Principles

The S34ML04G104BHV013 NAND Flash Memory utilizes a floating gate transistor structure to store data. When programming, electrons are trapped in the floating gate, representing a logical "1." Erasing the memory involves removing these trapped electrons, resetting the cell to a logical "0." The memory cells are organized into blocks, which can be individually programmed or erased.

Detailed Application Field Plans

The S34ML04G104BHV013 NAND Flash Memory is suitable for various applications, including but not limited to: - Solid-state drives (SSDs) - Smartphones and tablets - Digital cameras - Automotive infotainment systems - Industrial control systems - Embedded devices

Detailed and Complete Alternative Models

1. S34ML02G104BHI000
2. S34ML08G104BHV013
3. S34ML16G104BHI000
4. S34ML32G104BHI000

These alternative models offer different capacities and features to cater to specific application requirements.

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