S34ML04G200BHI003

Product Overview

Category

S34ML04G200BHI003 belongs to the category of NAND flash memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: S34ML04G200BHI003 has a storage capacity of 4 gigabytes (GB).
• Fast data transfer rate: It offers high-speed read and write operations, allowing for efficient data processing.
• Reliable performance: The product ensures data integrity and durability through advanced error correction techniques.
• Low power consumption: S34ML04G200BHI003 is designed to minimize power usage, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor, enabling easy integration into various electronic devices.

Package and Quantity

S34ML04G200BHI003 is packaged in a surface-mount technology (SMT) package. Each package contains one unit of the product.

Specifications

• Storage Capacity: 4 GB
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 100 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles
• Data Retention: Up to 10 years

Detailed Pin Configuration

The pin configuration of S34ML04G200BHI003 is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. /CE: Chip enable
4. /WE: Write enable
5. /RE: Read enable
6. CLE: Command latch enable
7. ALE: Address latch enable
8. WP#/ACC: Write protect or accelerated programming control
9. R/B#: Ready/Busy status
10. DQ0-DQ7: Data input/output

Functional Features

• Block Erase and Program: S34ML04G200BHI003 allows for erasing and programming data in blocks, enabling efficient management of stored information.
• Error Correction Code (ECC): The product employs ECC algorithms to detect and correct errors, ensuring data integrity.
• Wear-Leveling: It incorporates wear-leveling techniques to distribute write operations evenly across memory cells, extending the lifespan of the NAND flash memory.
• Bad Block Management: S34ML04G200BHI003 includes mechanisms to identify and manage bad blocks, preventing data loss and maintaining overall reliability.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Low power consumption
• Compact form factor
• Reliable performance

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Relatively higher cost per gigabyte compared to traditional hard disk drives

Working Principles

S34ML04G200BHI003 utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. To read or write data, specific voltage levels are applied to the appropriate pins, allowing for the manipulation of charge levels within the memory cells.

Detailed Application Field Plans

S34ML04G200BHI003 finds applications in various electronic devices that require non-volatile data storage. Some potential application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

1. S34ML02G200BHI003: 2 GB NAND flash memory with similar specifications.
2. S34ML08G200BHI003: 8 GB NAND flash memory with similar specifications.
3. S34ML16G200BHI003: 16 GB NAND flash memory with similar specifications.

These alternative models offer different storage capacities while maintaining similar characteristics and functionality to S34ML04G200BHI003.

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