Diodes Incorporated
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BC856B-13-F
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BC856B-13-F

Product Overview

Category: Transistor
Use: Amplification and switching in electronic circuits
Characteristics: Small signal NPN transistor, low power dissipation, high current gain
Package: SOT-23
Essence: High-performance silicon epitaxial planar transistors
Packaging/Quantity: Tape & Reel, 3000 pieces per reel

Specifications

  • Collector-Base Voltage (VCBO): 80V
  • Collector-Emitter Voltage (VCEO): 65V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (PD): 250mW
  • Transition Frequency (fT): 150MHz
  • Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

  1. Emitter (E)
  2. Base (B)
  3. Collector (C)

Functional Features

  • High current gain
  • Low noise figure
  • High transition frequency
  • Complementary PNP type available (BC846B-13-F)

Advantages

  • Small package size
  • Wide operating temperature range
  • Suitable for high-density surface mount applications

Disadvantages

  • Limited collector current compared to other transistors
  • Relatively low power dissipation capability

Working Principles

The BC856B-13-F is a small signal NPN transistor that amplifies or switches electronic signals. When a small current flows into the base of the transistor, it controls a much larger current flowing between the collector and emitter.

Detailed Application Field Plans

  1. Audio amplification circuits
  2. Signal processing circuits
  3. Switching circuits
  4. Oscillator circuits

Detailed and Complete Alternative Models

  1. BC847B-13-F
  2. BC848B-13-F
  3. BC849B-13-F
  4. 2N3904

This completes the entry for BC856B-13-F, covering its product details, specifications, features, and application field plans within the specified word count.

기술 솔루션에 BC856B-13-F 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum collector current of BC856B-13-F?

    • The maximum collector current of BC856B-13-F is 100mA.

  2. What is the typical hFE (DC current gain) of BC856B-13-F?

    • The typical hFE of BC856B-13-F is 200-450.

  3. What is the maximum power dissipation of BC856B-13-F?

    • The maximum power dissipation of BC856B-13-F is 250mW.

  4. What are the typical applications of BC856B-13-F?

    • BC856B-13-F is commonly used in audio amplification, signal processing, and general purpose switching applications.

  5. What is the maximum Vce (collector-emitter voltage) of BC856B-13-F?

    • The maximum Vce of BC856B-13-F is 65V.

  6. Is BC856B-13-F suitable for low noise amplifier circuits?

    • Yes, BC856B-13-F is suitable for low noise amplifier circuits due to its low noise characteristics.

  7. Can BC856B-13-F be used in high frequency applications?

    • Yes, BC856B-13-F can be used in high frequency applications due to its high transition frequency (fT).

  8. What is the package type of BC856B-13-F?

    • BC856B-13-F is available in a SOT-23 surface mount package.

  9. Does BC856B-13-F have a complementary PNP transistor?

    • Yes, the complementary PNP transistor to BC856B-13-F is BC846B-13-F.

  10. What are the recommended operating conditions for BC856B-13-F?

    • The recommended operating conditions for BC856B-13-F include a collector current (Ic) of 100mA, a collector-emitter voltage (Vce) of 65V, and a power dissipation (Ptot) of 250mW.