BS170FTA

Product Overview

Category: Electronic Component
Use: Amplification and Switching
Characteristics: Small signal N-channel MOSFET
Package: TO-92
Essence: High voltage, low input capacitance
Packaging/Quantity: Bulk packaging, 100 pieces per pack

Specifications

• Voltage - Drain-Source Breakdown (V(BR)DSS): 60V
• Current - Continuous Drain (Id) @ 25°C: 500mA
• Rds On (Max) @ Id, Vgs: 5 Ohm @ 10mA, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) @ Vgs: 4nC @ 10V
• Input Capacitance (Ciss) @ Vds: 20pF @ 25V
• Power Dissipation (Max): 625mW

Detailed Pin Configuration

1. Gate (G)
2. Source (S)
3. Drain (D)

Functional Features

• Low input capacitance for high-speed switching applications
• High voltage capability suitable for various electronic circuits
• Small package size for space-constrained designs

Advantages

• High voltage breakdown capability
• Low input capacitance for fast switching
• Compact TO-92 package for versatile integration

Disadvantages

• Limited continuous drain current compared to some alternative models
• Relatively higher Rds On at lower gate voltages

Working Principles

The BS170FTA is a small signal N-channel MOSFET designed for amplification and switching applications. It operates based on the principles of field-effect transistors, utilizing the voltage applied to the gate terminal to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The BS170FTA is commonly used in audio amplifiers, signal processing circuits, and low-power switching applications. Its high voltage capability makes it suitable for interfacing with various electronic components while its low input capacitance allows for efficient high-speed switching.

Detailed and Complete Alternative Models

1. 2N7002
2. BS270
3. IRF530

In conclusion, the BS170FTA is a versatile small signal N-channel MOSFET with high voltage capability and low input capacitance, making it suitable for a wide range of amplification and switching applications.

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