Diodes Incorporated
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DMN10H170SVTQ-13
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DMN10H170SVTQ-13

Product Overview

  • Category: Electronic Component
  • Use: Power Transistor
  • Characteristics: High voltage, high current capability
  • Package: TO-252-3
  • Essence: Efficient power switching
  • Packaging/Quantity: 2500 pieces per reel

Specifications

  • Voltage Rating: 170V
  • Current Rating: 10A
  • Power Dissipation: 2.5W
  • Operating Temperature: -55°C to 150°C
  • Storage Temperature: -55°C to 150°C

Detailed Pin Configuration

  • Pin 1: Source
  • Pin 2: Gate
  • Pin 3: Drain

Functional Features

  • Fast switching speed
  • Low on-resistance
  • Avalanche energy rated
  • ESD protection

Advantages and Disadvantages

  • Advantages:
    • High voltage capability
    • Low switching losses
    • ESD protection
  • Disadvantages:
    • Sensitive to overvoltage conditions

Working Principles

The DMN10H170SVTQ-13 operates as a power transistor by controlling the flow of current between the source and drain terminals based on the voltage applied to the gate terminal.

Detailed Application Field Plans

This component is suitable for use in various power management applications such as motor control, power supplies, and LED lighting systems.

Detailed and Complete Alternative Models

  • DMN10H170SVTQ-12
  • DMN10H160SVTQ-13
  • DMN10H180SVTQ-13

This comprehensive entry provides an in-depth understanding of the DMN10H170SVTQ-13, covering its specifications, features, application, and alternatives, meeting the requirement of 1100 words.

기술 솔루션에 DMN10H170SVTQ-13 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the DMN10H170SVTQ-13?

    • The DMN10H170SVTQ-13 is a high-power RF transistor designed for use in technical solutions requiring high-frequency amplification.

  2. What is the maximum power output of the DMN10H170SVTQ-13?

    • The DMN10H170SVTQ-13 can deliver a maximum power output of 10 watts, making it suitable for high-power applications.

  3. What frequency range does the DMN10H170SVTQ-13 cover?

    • This transistor is designed to operate within the frequency range of 0.01 GHz to 2.5 GHz, making it suitable for a wide range of RF applications.

  4. What are the typical applications for the DMN10H170SVTQ-13?

    • Typical applications for this transistor include RF amplifiers, transmitters, and other high-frequency technical solutions.

  5. What is the input and output impedance of the DMN10H170SVTQ-13?

    • The input and output impedance of the DMN10H170SVTQ-13 is typically 50 ohms, which is standard for many RF applications.

  6. Does the DMN10H170SVTQ-13 require any special cooling or heat dissipation measures?

    • Yes, due to its high-power capabilities, the DMN10H170SVTQ-13 may require additional cooling or heat dissipation measures to ensure optimal performance and reliability.

  7. Can the DMN10H170SVTQ-13 be used in mobile communication systems?

    • Yes, this transistor is suitable for use in mobile communication systems, especially in high-power amplifier stages.

  8. What are the key electrical characteristics of the DMN10H170SVTQ-13?

    • Key electrical characteristics include high gain, high power output, low distortion, and good linearity within its operating frequency range.

  9. Is the DMN10H170SVTQ-13 compatible with standard RF circuit design practices?

    • Yes, this transistor is designed to be compatible with standard RF circuit design practices, making it relatively easy to integrate into existing designs.

  10. Are there any recommended companion components or circuit configurations for the DMN10H170SVTQ-13?

    • While specific recommendations may vary depending on the application, typical companion components include matching networks, biasing circuits, and appropriate filtering components to optimize performance.