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ZVN4306GVTA

ZVN4306GVTA

Product Overview

Category

The ZVN4306GVTA belongs to the category of power MOSFETs.

Use

It is commonly used as a switching device in electronic circuits, particularly in power supply and motor control applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate drive power
  • Enhanced ruggedness

Package

The ZVN4306GVTA is typically available in a TO-92 package.

Essence

This MOSFET is essential for controlling high-power loads efficiently and effectively.

Packaging/Quantity

It is usually packaged in reels or tubes, with varying quantities depending on the supplier.

Specifications

  • Drain-Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 1.2A
  • RDS(ON) (Max) @ VGS = 10V: 4.5 Ohm
  • Gate-Source Voltage (Vgs): ±20V
  • Total Power Dissipation (PD): 625mW

Detailed Pin Configuration

The ZVN4306GVTA has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low gate-to-source charge (Qg)
  • Avalanche energy specified
  • Improved dv/dt capability
  • RoHS compliant

Advantages and Disadvantages

Advantages

  • Low on-resistance
  • High voltage capability
  • Fast switching speed
  • Low gate drive power

Disadvantages

  • Limited continuous drain current compared to some higher-power MOSFETs
  • Higher RDS(ON) compared to some specialized low-resistance MOSFETs

Working Principles

The ZVN4306GVTA operates based on the principles of field-effect transistors, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal.

Detailed Application Field Plans

The ZVN4306GVTA is widely used in various applications, including: - Switching power supplies - Motor control circuits - LED lighting drivers - Battery management systems - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the ZVN4306GVTA include: - IRF530N - FQP30N06L - IRL540N - STP55NF06L

In conclusion, the ZVN4306GVTA is a versatile power MOSFET that offers high voltage capability, fast switching speed, and low on-resistance, making it suitable for a wide range of electronic applications.

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기술 솔루션에 ZVN4306GVTA 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

  1. What is the maximum drain-source voltage rating of ZVN4306GVTA?

    • The maximum drain-source voltage rating of ZVN4306GVTA is 60 volts.
  2. What is the typical on-state resistance of ZVN4306GVTA?

    • The typical on-state resistance of ZVN4306GVTA is around 1.5 ohms.
  3. Can ZVN4306GVTA be used for low-power switching applications?

    • Yes, ZVN4306GVTA is suitable for low-power switching applications due to its low on-state resistance and voltage rating.
  4. What is the maximum continuous drain current for ZVN4306GVTA?

    • The maximum continuous drain current for ZVN4306GVTA is typically around 200 mA.
  5. Is ZVN4306GVTA suitable for battery-powered applications?

    • Yes, ZVN4306GVTA is suitable for battery-powered applications due to its low power consumption and voltage rating.
  6. Does ZVN4306GVTA require a heat sink for normal operation?

    • In most cases, ZVN4306GVTA does not require a heat sink for normal operation due to its low power dissipation.
  7. What are the typical applications for ZVN4306GVTA in technical solutions?

    • ZVN4306GVTA is commonly used in low-power switching circuits, battery management systems, and portable electronic devices.
  8. What is the recommended operating temperature range for ZVN4306GVTA?

    • The recommended operating temperature range for ZVN4306GVTA is -55°C to 150°C.
  9. Can ZVN4306GVTA be used in automotive electronics applications?

    • Yes, ZVN4306GVTA can be used in automotive electronics applications due to its voltage rating and temperature range.
  10. Are there any specific considerations for driving ZVN4306GVTA with a microcontroller?

    • When driving ZVN4306GVTA with a microcontroller, it's important to ensure that the gate voltage meets the threshold requirements and that the microcontroller's output can provide sufficient current to drive the MOSFET.