6116SA70DB

Product Overview

Category

The 6116SA70DB belongs to the category of semiconductor memory devices.

Use

It is primarily used for storing digital information in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High-speed access: Allows for quick retrieval and modification of data.
• Compact size: Occupies minimal space on circuit boards.
• Low power consumption: Operates efficiently, minimizing energy usage.
• Durable: Resistant to physical damage and environmental factors.

Package

The 6116SA70DB is typically packaged in a small dual in-line package (DIP).

Essence

The essence of the 6116SA70DB lies in its ability to provide reliable and efficient storage of digital data in electronic systems.

Packaging/Quantity

The product is usually supplied in reels or trays, with each containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory capacity: 2 kilobits (256 bytes)
• Organization: 8 bits x 256 words
• Supply voltage: 5V
• Access time: 70 nanoseconds
• Operating temperature range: -40°C to +85°C
• Pin count: 24

Detailed Pin Configuration

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VCC
10. CE (Chip Enable)
11. OE (Output Enable)
12. WE (Write Enable)
13. I/O0
14. I/O1
15. I/O2
16. I/O3
17. I/O4
18. I/O5
19. I/O6
20. I/O7
21. GND
22. NC (No Connection)
23. NC (No Connection)
24. NC (No Connection)

Functional Features

• Chip Enable (CE): Activates the memory chip for read/write operations.
• Output Enable (OE): Enables the output buffers to drive data onto the I/O pins.
• Write Enable (WE): Allows data to be written into the memory cells.
• Input/Output (I/O) pins: Used for data input/output operations.
• Address pins (A0-A7): Select the memory location to be accessed.

Advantages and Disadvantages

Advantages

• Fast access time allows for efficient data retrieval.
• Non-volatile nature ensures data retention even during power loss.
• Compact size makes it suitable for space-constrained applications.
• Low power consumption reduces energy usage.
• Durable construction provides resistance to physical damage.

Disadvantages

• Limited memory capacity compared to modern storage devices.
• Relatively slower access time compared to newer memory technologies.
• Requires external circuitry for interfacing with microcontrollers or processors.

Working Principles

The 6116SA70DB is based on the technology of static random-access memory (SRAM). It utilizes flip-flop circuits to store and retrieve data. The memory cells are organized in a matrix, with each cell representing a bit of information. The address lines select the desired memory location, and the data is read from or written to the selected location using control signals such as CE, OE, and WE.

Detailed Application Field Plans

The 6116SA70DB finds application in various electronic systems, including but not limited to: - Microcontrollers - Embedded systems - Communication devices - Industrial automation equipment - Consumer electronics

Alternative Models

Several alternative models with similar specifications and functionality to the 6116SA70DB are available in the market. Some notable alternatives include: - 6116SA70DC - 6116SA70DD - 6116SA70DE

These models are compatible replacements and can be used interchangeably with the 6116SA70DB.

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