71V016SA12BFG

Product Overview

Category

The 71V016SA12BFG belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic systems.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Reliable performance

Package

The 71V016SA12BFG is available in a compact package, suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

The 71V016SA12BFG is typically packaged in trays or reels, with varying quantities depending on customer requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 16 Megabits (2 Megabytes)
• Organization: 2M x 8 bits
• Supply Voltage: 3.3V
• Access Time: 12 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: Fine-pitch Ball Grid Array (FBGA)

Detailed Pin Configuration

The 71V016SA12BFG has a total of 48 pins, which are assigned specific functions as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A20 - Address inputs
4. DQ0-DQ7 - Data inputs/outputs
5. CE1, CE2 - Chip enable inputs
6. OE - Output enable input
7. WE - Write enable input
8. UB/LB - Byte control inputs
9. CLK - Clock input
10. NC - No connection (reserved pin)

(Note: The above list provides a brief overview of the pin configuration. For a complete and detailed pinout diagram, please refer to the product datasheet.)

Functional Features

• High-speed access and data transfer
• Non-volatile storage (retains data even when power is disconnected)
• Low standby power consumption
• Easy integration into various electronic systems
• Compatibility with standard memory interfaces

Advantages and Disadvantages

Advantages

• Fast and reliable data access
• Large storage capacity
• Low power consumption
• Compact package size
• Suitable for a wide range of applications

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified capacity

Working Principles

The 71V016SA12BFG utilizes static random access memory technology, which stores data in a volatile manner using flip-flop circuits. It operates by storing binary information as electrical charges within these flip-flops. The stored data can be accessed and manipulated through specific address and control signals.

Detailed Application Field Plans

The 71V016SA12BFG finds application in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial automation systems - Consumer electronics

Detailed and Complete Alternative Models

1. 71V016SA10BFG - Similar to the 71V016SA12BFG, but with a faster access time of 10 ns.
2. 71V032SA12BFG - Double the capacity of the 71V016SA12BFG, offering 32 Megabits (4 Megabytes) of storage.
3. 71V008SA12BFG - Half the capacity of the 71V016SA12BFG, providing 8 Megabits (1 Megabyte) of storage.

(Note: The above list provides a few alternative models for reference. For a comprehensive list of alternative models, please consult the manufacturer's product catalog.)

In conclusion, the 71V016SA12BFG is a high-speed, large-capacity SRAM device used for data storage and retrieval in various electronic systems. Its compact package, low power consumption, and reliable performance make it suitable for a wide range of applications. While it offers advantages such as fast access and large storage capacity, it also has limitations in terms of cost and scalability. Nonetheless, its functional features and working principles make it an essential component in modern electronic devices.

Word count: 533