71V2546S150BG8

Basic Information Overview

Category: Integrated Circuit (IC)
Use: Memory chip
Characteristics: High-speed, low-power, synchronous SRAM
Package: BGA (Ball Grid Array)
Essence: Storage and retrieval of digital data
Packaging/Quantity: Individual chip

Specifications

Type: Synchronous SRAM
Organization: 256K x 36 bits
Voltage Supply: 3.3V
Access Time: 10 ns
Operating Temperature Range: -40°C to +85°C
Package Dimensions: 15mm x 15mm

Detailed Pin Configuration

The 71V2546S150BG8 has a total of 119 pins. The pin configuration is as follows:

VDDQ
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
GND
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
A20
A21
A22
A23
A24
A25
A26
A27
A28
A29
A30
A31
A32
A33
A34
A35
A36
A37
A38
A39
A40
A41
A42
A43
A44
A45
A46
A47
A48
A49
A50
A51
A52
A53
A54
A55
A56
A57
A58
A59
A60
A61
A62
A63
A64
A65
A66
A67
A68
A69
A70
A71
A72
A73
A74
A75
A76
A77
A78
A79
A80
A81
A82
A83
VSSQ

Functional Features

High-speed operation for fast data access
Low-power consumption for energy efficiency
Synchronous interface for easy integration with other components
Non-volatile storage of data even during power loss
Automatic refresh capability to maintain data integrity

Advantages and Disadvantages

Advantages: - Fast access time allows for quick data retrieval - Low-power consumption reduces energy usage - Synchronous interface simplifies system design - Non-volatile storage ensures data integrity

Disadvantages: - Limited storage capacity compared to other memory technologies - Higher cost per bit compared to alternative memory options

Working Principles

The 71V2546S150BG8 is a synchronous SRAM, which means it uses a clock signal to synchronize data transfers. It operates by storing digital data in a matrix of memory cells organized as 256K x 36 bits. The stored data can be accessed and retrieved at high speeds due to the chip's internal architecture and circuitry.

Detailed Application Field

기술 솔루션에 71V2546S150BG8 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

Sure! Here are 10 common questions and answers related to the application of 71V2546S150BG8 in technical solutions:

Q: What is the 71V2546S150BG8? A: The 71V2546S150BG8 is a specific model of synchronous SRAM (Static Random Access Memory) chip.
Q: What is the capacity of the 71V2546S150BG8? A: The 71V2546S150BG8 has a capacity of 256 kilobits (Kb).
Q: What is the operating voltage range for this chip? A: The 71V2546S150BG8 operates within a voltage range of 4.5V to 5.5V.
Q: What is the speed rating of the 71V2546S150BG8? A: The 71V2546S150BG8 has a speed rating of 150 nanoseconds (ns).
Q: Can the 71V2546S150BG8 be used in industrial applications? A: Yes, the 71V2546S150BG8 is suitable for use in industrial applications due to its robust design and reliability.
Q: Does the 71V2546S150BG8 support multiple read and write operations simultaneously? A: No, the 71V2546S150BG8 does not support simultaneous multiple read and write operations.
Q: Is the 71V2546S150BG8 compatible with standard memory interfaces? A: Yes, the 71V2546S150BG8 is compatible with industry-standard memory interfaces such as asynchronous and synchronous interfaces.
Q: Can the 71V2546S150BG8 be used in battery-powered devices? A: Yes, the 71V2546S150BG8 can be used in battery-powered devices as it operates within a low voltage range.
Q: Does the 71V2546S150BG8 have any built-in error correction capabilities? A: No, the 71V2546S150BG8 does not have built-in error correction capabilities. External error correction techniques may be required.
Q: What is the typical temperature range for the 71V2546S150BG8? A: The 71V2546S150BG8 typically operates within a temperature range of -40°C to +85°C.

Please note that these answers are general and may vary depending on the specific application and requirements.