71V321S35J

Product Overview

Category

The 71V321S35J belongs to the category of semiconductor memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• High storage capacity
• Fast access times
• Non-volatile memory
• Low power consumption

Package

The 71V321S35J is available in a compact integrated circuit (IC) package.

Essence

The essence of the 71V321S35J lies in its ability to provide reliable and efficient data storage and retrieval capabilities.

Packaging/Quantity

The product is typically packaged individually and is available in various quantities depending on customer requirements.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 32 Megabits (4 Megabytes)
• Organization: 2M x 16 bits
• Supply Voltage: 3.3V
• Access Time: 35 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Package Type: 48-pin TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The 71V321S35J features a 48-pin TSOP package with the following pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. DQ0
19. DQ1
20. DQ2
21. DQ3
22. DQ4
23. DQ5
24. DQ6
25. DQ7
26. DQ8
27. DQ9
28. DQ10
29. DQ11
30. DQ12
31. DQ13
32. DQ14
33. DQ15
34. WE#
35. OE#
36. CE#
37. UB#
38. LB#
39. VSS
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. VCC

Functional Features

• High-speed data access
• Low power consumption
• Easy integration into electronic systems
• Reliable data retention
• Compatibility with various system architectures

Advantages and Disadvantages

Advantages

• Fast access times enable efficient data processing
• Non-volatile memory ensures data integrity even during power loss
• Low power consumption contributes to energy-efficient designs

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per unit compared to alternative memory solutions

Working Principles

The 71V321S35J utilizes static random access memory (SRAM) technology, which stores each bit of data in a flip-flop circuit. This allows for fast access times and low latency. The memory cells retain their data as long as power is supplied to the device.

Detailed Application Field Plans

The 71V321S35J finds applications in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to the 71V321S35J include: - 71V321L35J - 71V321R35J - 71V321S35B - 71V321S35P

These models may differ in certain specifications or package types, but they serve the same purpose of providing high-speed, non-volatile memory storage.

In conclusion, the 71V321S35J is a semiconductor memory device that offers fast access times, low power consumption, and reliable data storage. It finds applications in various electronic systems and has alternative models with similar functionality.