IDT, Integrated Device Technology Inc
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71V35761S200BG8
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71V35761S200BG8

Basic Information Overview

  • Category: Integrated Circuit (IC)
  • Use: Memory chip
  • Characteristics:
    • High-speed operation
    • Low power consumption
    • Large storage capacity
  • Package: BG8 package
  • Essence: Non-volatile memory
  • Packaging/Quantity: Individual chip

Specifications

  • Model: 71V35761S200BG8
  • Memory Type: Static Random Access Memory (SRAM)
  • Capacity: 2 Megabits (256K x 8)
  • Operating Voltage: 3.3V
  • Access Time: 10 ns
  • Organization: 256K words x 8 bits
  • Interface: Parallel
  • Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The 71V35761S200BG8 IC has the following pin configuration:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. CE#
  19. OE#
  20. WE#
  21. I/O0
  22. I/O1
  23. I/O2
  24. I/O3
  25. I/O4
  26. I/O5
  27. I/O6
  28. I/O7
  29. GND

Functional Features

  • High-speed operation allows for quick data access.
  • Low power consumption ensures energy efficiency.
  • Large storage capacity provides ample space for data storage.
  • Non-volatile memory retains data even when power is disconnected.

Advantages and Disadvantages

Advantages: - Fast access time - Low power consumption - Large storage capacity

Disadvantages: - Limited compatibility with certain systems - Higher cost compared to other memory options

Working Principles

The 71V35761S200BG8 is a static random access memory (SRAM) chip. It stores data using flip-flop circuits, which retain information as long as power is supplied. The chip operates by addressing specific memory locations and reading or writing data to those locations.

Detailed Application Field Plans

The 71V35761S200BG8 is commonly used in various electronic devices that require high-speed data storage and retrieval. Some application fields include:

  1. Computer systems
  2. Networking equipment
  3. Telecommunications devices
  4. Industrial control systems
  5. Automotive electronics

Detailed and Complete Alternative Models

  1. 71V35761S200BGI8: Similar specifications but with an industrial temperature range.
  2. 71V35761S200BGG8: Similar specifications but with a wider operating voltage range.
  3. 71V35761S200BGR8: Similar specifications but with reduced power consumption.

These alternative models offer similar functionality but may have slight variations in operating conditions or features.

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기술 솔루션에 71V35761S200BG8 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

Sure! Here are 10 common questions and answers related to the application of 71V35761S200BG8 in technical solutions:

  1. Question: What is the purpose of the 71V35761S200BG8 in technical solutions?
    Answer: The 71V35761S200BG8 is a high-speed, low-power synchronous SRAM that is commonly used for data storage and retrieval in various technical solutions.

  2. Question: What is the operating voltage range for the 71V35761S200BG8?
    Answer: The operating voltage range for this SRAM is typically between 3.0V and 3.6V.

  3. Question: What is the capacity of the 71V35761S200BG8?
    Answer: The 71V35761S200BG8 has a capacity of 4 Megabits (4Mb) or 512K x 8 bits.

  4. Question: What is the access time of the 71V35761S200BG8?
    Answer: The access time for this SRAM is typically 10 ns, which means it can retrieve data within 10 nanoseconds.

  5. Question: Can the 71V35761S200BG8 operate at high temperatures?
    Answer: Yes, this SRAM is designed to operate at extended temperature ranges, typically from -40°C to +85°C.

  6. Question: Does the 71V35761S200BG8 support multiple read/write operations simultaneously?
    Answer: No, this SRAM does not support simultaneous read/write operations. It operates in a single-port mode.

  7. Question: Is the 71V35761S200BG8 compatible with different microcontrollers or processors?
    Answer: Yes, this SRAM is compatible with a wide range of microcontrollers and processors that support the industry-standard SRAM interface.

  8. Question: Can the 71V35761S200BG8 be used in battery-powered devices?
    Answer: Yes, this SRAM is designed to operate at low power, making it suitable for battery-powered devices.

  9. Question: Does the 71V35761S200BG8 have any built-in error correction capabilities?
    Answer: No, this SRAM does not have built-in error correction capabilities. Additional error correction mechanisms may need to be implemented if required.

  10. Question: Are there any specific design considerations when using the 71V35761S200BG8 in technical solutions?
    Answer: It is important to ensure proper decoupling and signal integrity measures are implemented to optimize the performance of the SRAM. Additionally, attention should be given to timing requirements and voltage levels as specified in the datasheet.

Please note that these answers are general and may vary depending on the specific application and requirements.