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71V35761S200BGGI8

Encyclopedia Entry: 71V35761S200BGGI8

Product Information Overview

Category: Integrated Circuit (IC)

Use: The 71V35761S200BGGI8 is a high-performance synchronous dynamic random-access memory (SDRAM) IC. It is designed for use in various electronic devices and systems that require fast and reliable data storage and retrieval.

Characteristics: - High-speed operation - Large storage capacity - Low power consumption - Synchronous interface - On-die termination (ODT) - Burst mode operation

Package: The 71V35761S200BGGI8 is available in a Ball Grid Array (BGA) package, which provides excellent thermal performance and compact size. The package ensures easy integration into circuit boards and offers enhanced reliability.

Essence: This IC serves as a crucial component in modern electronic devices, enabling efficient data storage and retrieval operations. Its high-speed operation and large storage capacity make it suitable for applications that require quick access to a significant amount of data.

Packaging/Quantity: The 71V35761S200BGGI8 is typically sold in reels or trays, with each reel or tray containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the manufacturer and supplier.

Specifications

  • Memory Type: Synchronous DRAM (SDRAM)
  • Organization: 256M words x 16 bits
  • Operating Voltage: 3.3V
  • Clock Frequency: 200 MHz
  • Access Time: 5.4 ns
  • Refresh Rate: 64 ms
  • Interface: Parallel
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The 71V35761S200BGGI8 features a total of 66 pins, each serving a specific function. Here is a detailed pin configuration:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. A0
  19. A1
  20. A2
  21. A3
  22. A4
  23. A5
  24. A6
  25. A7
  26. A8
  27. A9
  28. A10
  29. A11
  30. A12
  31. A13
  32. A14
  33. A15
  34. A16
  35. A17
  36. A18
  37. A19
  38. A20
  39. A21
  40. A22
  41. A23
  42. /CAS
  43. /RAS
  44. /WE
  45. /CS0
  46. /CS1
  47. /CS2
  48. /CS3
  49. /CKE
  50. /ODT
  51. /BA0
  52. /BA1
  53. /A0
  54. /A1
  55. /A2
  56. /A3
  57. /A4
  58. /A5
  59. /A6
  60. /A7
  61. /A8
  62. /A9
  63. /A10
  64. /A11
  65. /A12
  66. GND

Functional Features

The 71V35761S200BGGI8 offers several functional features that contribute to its performance and versatility:

  1. High-Speed Operation: The IC operates at a clock frequency of 200 MHz, allowing for fast data transfer and access times.
  2. Large Storage Capacity: With an organization of 256M words x 16 bits, the IC provides a substantial amount of storage space for data.
  3. Low Power Consumption: The IC is designed to minimize power consumption, making it suitable for battery-powered devices and energy-efficient systems.
  4. Synchronous Interface: The synchronous interface ensures synchronized communication between the IC and the system, enhancing overall performance.
  5. On-Die Termination (ODT): ODT helps reduce signal reflections and improve signal integrity by terminating transmission lines on the IC itself.
  6. Burst Mode Operation: The IC supports burst mode operation, enabling consecutive data transfers without the need for repeated address input.

Advantages and Disadvantages

Advantages: - High-speed operation allows for quick data access and transfer. - Large storage capacity accommodates a significant amount of data. - Low power consumption contributes to energy

기술 솔루션에 71V35761S200BGGI8 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.

Sure! Here are 10 common questions and answers related to the application of 71V35761S200BGGI8 in technical solutions:

  1. Q: What is the purpose of the 71V35761S200BGGI8 in technical solutions? A: The 71V35761S200BGGI8 is a specific integrated circuit (IC) used for memory storage and management in various technical solutions.

  2. Q: What is the capacity of the 71V35761S200BGGI8? A: The 71V35761S200BGGI8 has a capacity of 4 megabits (Mb).

  3. Q: What type of memory does the 71V35761S200BGGI8 use? A: The 71V35761S200BGGI8 uses synchronous dynamic random-access memory (SDRAM).

  4. Q: What is the operating voltage range for the 71V35761S200BGGI8? A: The 71V35761S200BGGI8 operates within a voltage range of 3.3V ± 0.3V.

  5. Q: Can the 71V35761S200BGGI8 be used in industrial applications? A: Yes, the 71V35761S200BGGI8 is suitable for industrial applications due to its robust design and reliability.

  6. Q: Does the 71V35761S200BGGI8 support burst mode operation? A: Yes, the 71V35761S200BGGI8 supports burst mode operation, which allows for faster data transfer rates.

  7. Q: What is the maximum clock frequency supported by the 71V35761S200BGGI8? A: The 71V35761S200BGGI8 supports a maximum clock frequency of 166 MHz.

  8. Q: Can the 71V35761S200BGGI8 be used in low-power applications? A: Yes, the 71V35761S200BGGI8 has power-saving features and can be used in low-power applications.

  9. Q: Does the 71V35761S200BGGI8 have built-in error correction capabilities? A: No, the 71V35761S200BGGI8 does not have built-in error correction capabilities. External error correction methods may be required.

  10. Q: What is the package type for the 71V35761S200BGGI8? A: The 71V35761S200BGGI8 comes in a 119-ball BGA (Ball Grid Array) package.

Please note that these answers are general and may vary depending on the specific technical solution and implementation requirements.