71V424L15YG

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, non-volatile
• Package: Surface Mount Technology (SMT)
• Essence: Non-volatile Static Random Access Memory (nvSRAM)
• Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

• Memory Size: 4 Megabits (512K x 8)
• Supply Voltage: 3.0V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 15 ns
• Standby Current: 20 µA typical
• Data Retention: 100 years minimum
• Package Type: 48-pin Thin Small Outline Package (TSOP)

Detailed Pin Configuration

The 71V424L15YG IC has a total of 48 pins. The pin configuration is as follows:

1. A0
2. A1
3. A2
4. A3
5. A4
6. A5
7. A6
8. A7
9. VCC
10. CE#
11. OE#
12. WE#
13. I/O0
14. I/O1
15. I/O2
16. I/O3
17. I/O4
18. I/O5
19. I/O6
20. I/O7
21. GND
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Non-volatile memory: Retains data even when power is lost
• High-speed operation: Access time of 15 ns allows for quick data retrieval
• Low-power consumption: Standby current of only 20 µA extends battery life
• Easy integration: Compatible with standard SRAM interfaces
• Reliable data retention: Minimum data retention of 100 years ensures long-term storage

Advantages and Disadvantages

Advantages: - Non-volatile nature ensures data integrity during power interruptions - High-speed operation enables fast data access - Low-power consumption prolongs battery life - Easy integration with existing systems - Long data retention period guarantees reliable storage

Disadvantages: - Limited memory size (4 Megabits) - Higher cost compared to traditional SRAM

Working Principles

The 71V424L15YG is a non-volatile static random access memory (nvSRAM) that combines the speed and ease of use of traditional SRAM with the non-volatile characteristics of flash memory. It utilizes a specialized ferroelectric material to store data, which retains its state even when power is lost. This allows for instant access to stored information upon power restoration.

Detailed Application Field Plans

The 71V424L15YG is commonly used in applications where data integrity is crucial, such as: - Industrial control systems - Automotive electronics - Medical devices - Aerospace and defense systems - Communication equipment

Detailed and Complete Alternative Models

1. 71V424S10PH - 4 Megabit nvSRAM, 10 ns access time, 3.0V to 3.6V supply voltage
2. 71V424S12PH - 4 Megabit nvSRAM, 12 ns access time, 3.0V to 3.6V supply voltage
3. 71V424S15PH - 4 Megabit nvSRAM, 15 ns access time, 3.0V to 3.6V supply voltage
4. 71V424S20PH - 4 Megabit nvSRAM, 20 ns access time, 3.0V to 3.6V supply voltage

These alternative models offer similar functionality and characteristics to the 71V424L15YG, with variations in access time and performance.

In conclusion, the 71V424L15YG is a high-speed, low-power non-volatile memory device that combines the advantages of SRAM and flash memory. Its unique ferroelectric technology ensures data retention even during power loss, making it suitable for various applications requiring reliable data storage.