IDT71P71804S250BQ

Product Overview

Category

The IDT71P71804S250BQ belongs to the category of integrated circuits (ICs).

Use

This product is primarily used in electronic devices for data storage and retrieval purposes.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable operation

Package

The IDT71P71804S250BQ is available in a compact and durable package, ensuring easy integration into various electronic systems.

Essence

This integrated circuit serves as a crucial component in enabling efficient data processing and storage within electronic devices.

Packaging/Quantity

The IDT71P71804S250BQ is typically packaged individually and is available in varying quantities depending on customer requirements.

Specifications

• Model: IDT71P71804S250BQ
• Memory Type: Static Random Access Memory (SRAM)
• Capacity: 1,048,576 words x 18 bits
• Operating Voltage: 2.5V
• Access Time: 10 ns
• Organization: 128K x 8
• Package Type: Ball Grid Array (BGA)
• Pin Count: 165

Detailed Pin Configuration

The IDT71P71804S250BQ features a total of 165 pins, each serving a specific function within the integrated circuit. The detailed pin configuration is as follows:

(Pin Number) - (Pin Name) - (Function)

1 - VDD - Power Supply Voltage 2 - VSS - Ground 3 - A0-A16 - Address Inputs 4 - DQ0-DQ17 - Data Inputs/Outputs 5 - WE - Write Enable 6 - OE - Output Enable 7 - CE1, CE2 - Chip Enable 8 - UB, LB - Byte Enables 9 - CLK - Clock Input 10 - NC - No Connection

(Note: The above list provides a brief overview of the pin configuration. For a complete and detailed pinout, please refer to the product datasheet.)

Functional Features

• High-speed data access and retrieval
• Low power consumption for energy-efficient operation
• Reliable performance in various operating conditions
• Easy integration into electronic systems due to compact package design
• Compatibility with standard memory interfaces

Advantages and Disadvantages

Advantages

• Fast data access time
• Large storage capacity
• Low power consumption
• Compact package design

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond the specified capacity

Working Principles

The IDT71P71804S250BQ operates based on the principles of static random access memory (SRAM). It utilizes flip-flops to store and retrieve data, allowing for fast and efficient access times. The integrated circuit is designed to retain data as long as power is supplied to the device.

Detailed Application Field Plans

The IDT71P71804S250BQ finds applications in various electronic devices that require high-speed data storage and retrieval capabilities. Some potential application fields include:

1. Networking equipment
2. Telecommunications systems
3. Industrial automation
4. Medical devices
5. Automotive electronics

Detailed and Complete Alternative Models

1. IDT71V416L15PHG - 4 Meg x 16 CMOS SRAM
2. IDT71V124SA12PHG - 1 Meg x 4 CMOS SRAM
3. IDT71V3557SA85BGGI - 256K x 18 CMOS SRAM
4. IDT71V35761S200BG - 512K x 36 CMOS SRAM
5. IDT71V35761S200BQ - 512K x 36 CMOS SRAM

(Note: The above list provides a few alternative models. For a comprehensive list of alternative models, please refer to the manufacturer's product catalog.)

In conclusion, the IDT71P71804S250BQ is a high-performance integrated circuit belonging to the category of static random access memory (SRAM). It offers fast data access, large storage capacity, and low power consumption, making it suitable for various applications in the electronics industry.