IDT71T75602S200PF

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous SRAM
• Package: 200-pin plastic quad flat pack (PQFP)
• Essence: Provides high-performance memory storage for various applications
• Packaging/Quantity: Sold in individual units or reels

Specifications

• Memory Type: Synchronous Static Random Access Memory (SRAM)
• Memory Size: 2 Megabits (256K x 8)
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Clock Frequency: 200 MHz
• Data Retention: 10 years
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IDT71T75602S200PF has a total of 200 pins. The pin configuration is as follows:

1. VDDQ
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSSQ
11. CLK
12. /CLK
13. /CS
14. /OE
15. /WE
16. A0
17. A1
18. A2
19. A3
20. A4
21. A5
22. A6
23. A7
24. A8
25. A9
26. A10
27. A11
28. A12
29. A13
30. A14
31. A15
32. A16
33. A17
34. A18
35. A19
36. A20
37. A21
38. A22
39. A23
40. VDDQ

(Note: The remaining pin configuration is not included for brevity.)

Functional Features

• High-speed operation with a clock frequency of up to 200 MHz
• Low-power consumption for energy-efficient applications
• Synchronous interface for easy integration into various systems
• 2 Megabits of memory storage for data-intensive tasks
• Reliable data retention for up to 10 years
• Wide operating temperature range for versatile usage scenarios

Advantages and Disadvantages

Advantages: - High-speed performance enables quick data access - Low-power consumption reduces energy usage - Synchronous interface simplifies system integration - Ample memory size for storing large amounts of data - Long data retention period ensures data integrity - Wide operating temperature range allows for diverse applications

Disadvantages: - Limited memory size compared to higher-capacity alternatives - Higher cost per megabit compared to larger memory devices - Requires careful handling due to delicate package and pins

Working Principles

The IDT71T75602S200PF operates as a synchronous SRAM, utilizing a clock signal to synchronize data transfers. When the chip select (/CS) signal is active low, the device is enabled for read or write operations. The address lines (A0-A23) specify the memory location to access, while the data lines (DQ0-DQ7) carry the actual data. The read enable (/OE) and write enable (/WE) signals control the direction of data flow.

Detailed Application Field Plans

The IDT71T75602S200PF can be used in various applications that require high-speed and reliable memory storage. Some potential application fields include:

1. Networking equipment: Used for buffering and caching data in routers, switches, and network appliances.
2. Telecommunications systems: Provides memory storage for voice and data processing in telecommunication infrastructure.
3. Industrial automation: Used in control systems and robotics for storing program code and temporary data.
4. Medical devices: Provides memory for medical imaging equipment, patient monitoring systems, and diagnostic devices.
5. Automotive electronics: Used in automotive control units, infotainment systems, and advanced driver assistance systems.

Detailed and Complete Alternative Models

1. IDT71V416: 4 Megabit (512K x 8) synchronous SRAM with similar characteristics and package.
2. Cypress CY62167EV30: 16 Megabit (2M x 8) synchronous SRAM with extended temperature range.
3. Micron MT45W8MW16BGX: 128 Megabit (16M x 8) synchronous SRAM with higher memory capacity.

(Note: The list of alternative models can be expanded based on specific requirements and availability.)

This concludes the encyclopedia entry for the IDT71T75602S200PF, a high-speed synchronous SRAM used for various