IDT71T75702S75BGI

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics:
  • High-speed operation
  • Large storage capacity
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory
• Packaging/Quantity: Single unit

Specifications

• Memory Type: SRAM (Static Random Access Memory)
• Memory Size: 2 Megabits (256K x 8)
• Operating Voltage: 3.3V
• Access Time: 7.5 ns
• Operating Temperature Range: -40°C to +85°C
• Data Retention: More than 20 years
• Interface: Parallel

Detailed Pin Configuration

The IDT71T75702S75BGI has a total of 119 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. GND
11. A8
12. A9
13. A10
14. A11
15. A12
16. A13
17. A14
18. A15
19. OE#
20. CE#

(Note: This is just a partial list. The complete pin configuration can be found in the product datasheet.)

Functional Features

• High-speed access and data transfer
• Non-volatile memory retains data even when power is disconnected
• Low power consumption for energy-efficient operation
• Easy integration into existing circuit designs
• Reliable performance with long data retention period

Advantages and Disadvantages

Advantages: - High-speed operation allows for quick data access - Large storage capacity suitable for various applications - Low power consumption helps conserve energy - Non-volatile memory ensures data retention even during power loss

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited compatibility with certain interface standards - Sensitive to electromagnetic interference (EMI)

Working Principles

The IDT71T75702S75BGI is based on SRAM technology. It stores data in a static manner, meaning that the data remains intact as long as power is supplied to the device. The memory cells are organized in a matrix of rows and columns, allowing for fast random access to any location within the memory array. The device uses an address bus to select the desired memory location and a data bus to read from or write to that location.

Detailed Application Field Plans

The IDT71T75702S75BGI is commonly used in various electronic devices and systems, including:

1. Computer systems
2. Networking equipment
3. Communication devices
4. Industrial control systems
5. Automotive electronics
6. Medical equipment

Its high-speed operation, large storage capacity, and low power consumption make it suitable for applications that require fast and reliable data storage and retrieval.

Detailed and Complete Alternative Models

1. IDT71V35761S85BQG8: 5 Megabit (512K x 10) SRAM, operating voltage 3.3V, access time 8.5 ns.
2. Cypress CY62157EV30LL-45ZSXI: 2 Megabit (256K x 8) SRAM, operating voltage 2.7V to 3.6V, access time 45 ns.
3. Micron MT45W8MW16BGX-701 WT: 16 Megabit (2M x 8) SRAM, operating voltage 1.7V to 1.95V, access time 70 ns.

(Note: This is just a sample list of alternative models. There are many other options available in the market.)

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