IDT71V016SA10YGI

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Thin Small Outline Package (TSOP)
• Essence: Stores and retrieves digital information in electronic systems
• Packaging/Quantity: Available in reels of 2500 units

Specifications

• Memory Size: 1 Megabit (128K x 8)
• Access Time: 10 nanoseconds
• Operating Voltage: 3.3 volts
• Standby Current: 20 microamps
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years

Detailed Pin Configuration

The IDT71V016SA10YGI has a total of 44 pins. The pin configuration is as follows:

1. A0-A16: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. CE1, CE2: Chip Enable Inputs
4. OE: Output Enable Input
5. WE: Write Enable Input
6. UB/LB: Upper Byte/Lower Byte Control Inputs
7. VCC: Power Supply
8. GND: Ground

Functional Features

• High-speed operation allows for fast data access and retrieval.
• Low-power consumption makes it suitable for battery-powered devices.
• Synchronous design ensures reliable and synchronized data transfers.
• Static RAM technology provides non-volatile storage capabilities.
• Easy integration into various electronic systems due to standard interface protocols.

Advantages and Disadvantages

Advantages: - Fast access time enables efficient data processing. - Low power consumption prolongs battery life. - Reliable and durable memory storage. - Compatibility with standard interface protocols simplifies integration.

Disadvantages: - Limited memory capacity compared to newer memory technologies. - Relatively higher cost per unit compared to other memory options. - Vulnerable to data loss in case of power failure.

Working Principles

The IDT71V016SA10YGI operates based on the principles of static random-access memory (SRAM). It stores digital information using flip-flops, which retain their state as long as power is supplied. The memory cells are organized in a matrix of rows and columns, with each cell storing one bit of data. Accessing data involves providing the appropriate address to select the desired memory location and enabling the necessary control signals for reading or writing operations.

Detailed Application Field Plans

The IDT71V016SA10YGI is commonly used in various electronic systems that require high-speed and low-power memory storage. Some specific application fields include:

1. Embedded Systems: Used in microcontrollers, digital signal processors, and other embedded devices to store program code and data.
2. Networking Equipment: Utilized in routers, switches, and network cards for buffering and caching purposes.
3. Telecommunications: Employed in base stations, modems, and communication devices for temporary data storage.
4. Industrial Automation: Integrated into PLCs (Programmable Logic Controllers) and industrial control systems for data buffering and real-time processing.
5. Consumer Electronics: Found in gaming consoles, set-top boxes, and multimedia devices for fast data access and storage.

Detailed and Complete Alternative Models

1. Samsung K6R4016V1D-JC10: 1 Megabit SRAM, 10 ns access time, 44-pin TSOP package.
2. Micron MT45W8MW16BGX-701 WT:B: 1 Megabit SRAM, 10 ns access time, 44-pin TSOP package.
3. Cypress CY62128ELL-45SXI: 1 Megabit SRAM, 45 ns access time, 44-pin TSOP package.
4. Renesas R1LV0416DSB-5SI: 1 Megabit SRAM, 5 ns access time, 44-pin TSOP package.

These alternative models offer similar memory capacity and package options but may vary in terms of access time, power consumption, and cost.