IDT71V016SA10YI8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Thin Small Outline Package (TSOP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, with a quantity of 250 units per reel

Specifications

• Memory Size: 1 Megabit (128K x 8)
• Operating Voltage: 3.3V
• Access Time: 10 nanoseconds (ns)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Greater than 10 years
• Standby Current: Less than 5mA
• Package Dimensions: 12.8mm x 20.4mm x 1.0mm

Detailed Pin Configuration

The IDT71V016SA10YI8 has a total of 44 pins. The pin configuration is as follows:

1. A9
2. A8
3. A7
4. A6
5. A5
6. A4
7. A3
8. A2
9. A1
10. A0
11. VCC
12. I/O0
13. I/O1
14. I/O2
15. I/O3
16. I/O4
17. I/O5
18. I/O6
19. I/O7
20. GND
21. CE2#
22. CE1#
23. WE#
24. OE#
25. BYTE#
26. UB/LB#
27. A10
28. A11
29. A12
30. A13
31. A14
32. A15
33. A16
34. A17
35. A18
36. A19
37. A20
38. A21
39. A22
40. A23
41. VCCQ
42. VCCQ
43. GNDQ
44. GNDQ

Functional Features

• Synchronous operation with a clock frequency of up to 100MHz
• Low-power standby mode for reduced power consumption
• Byte-write and page-write capability for efficient data storage
• Automatic power-down mode when not in use
• Built-in self-timed write cycle for simplified operation

Advantages and Disadvantages

Advantages: - High-speed access and data transfer capabilities - Low power consumption - Reliable data retention - Compact package size - Easy integration into various electronic systems

Disadvantages: - Limited memory capacity compared to newer memory technologies - Relatively higher cost per unit compared to other memory options

Working Principles

The IDT71V016SA10YI8 is a synchronous SRAM that operates based on the synchronous circuitry and memory cell design. It uses a clock signal to synchronize data transfers and operations. When the appropriate control signals are activated, the device can read or write data to and from the memory cells. The memory cells store data as electrical charges, which can be accessed and modified through the input/output pins.

Detailed Application Field Plans

The IDT71V016SA10YI8 is commonly used in various applications that require high-speed and reliable data storage and retrieval. Some of the typical application fields include:

1. Computer systems
2. Networking equipment
3. Telecommunications devices
4. Industrial automation systems
5. Medical equipment
6. Automotive electronics
7. Consumer electronics

Detailed and Complete Alternative Models

1. IDT71V016SA10PHI8
2. IDT71V016SA10YI
3. IDT71V016SA10YI8-2.5
4. IDT71V016SA10YI8-2.5T
5. IDT71V016SA10YI8-2.5TS

These alternative models offer similar specifications and functionality to the IDT71V016SA10YI8, providing options for different package types or operating temperature ranges.

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