IDT71V016SA15PH8

Product Overview

• Category: Integrated Circuit (IC)
• Use: Memory device
• Characteristics: High-speed, low-power, synchronous static random-access memory (SRAM)
• Package: 44-pin Plastic Thin Quad Flat Pack (TQFP)
• Essence: Provides fast and reliable data storage and retrieval capabilities
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Organization: 1M x 16
• Voltage Supply: 3.3V
• Access Time: 15ns
• Operating Temperature Range: -40°C to +85°C
• Standby Current: 10μA (typical)
• Package Dimensions: 10mm x 10mm x 1.4mm

Detailed Pin Configuration

The IDT71V016SA15PH8 has a total of 44 pins. The pin configuration is as follows:

1. A0-A19: Address Inputs
2. DQ0-DQ15: Data Inputs/Outputs
3. WE#: Write Enable Input
4. OE#: Output Enable Input
5. CE#: Chip Enable Input
6. UB#, LB#: Byte Enable Inputs
7. VCC: Power Supply
8. GND: Ground

Functional Features

• High-speed operation allows for quick data access and transfer
• Low-power consumption ensures efficient energy usage
• Synchronous design enables precise timing control
• Reliable data retention even in harsh environmental conditions
• Easy integration into various electronic systems due to standard interface protocols

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance - Low power consumption prolongs battery life in portable devices - Reliable data storage ensures data integrity - Standard package size facilitates easy integration into existing designs

Disadvantages: - Limited storage capacity compared to other memory technologies - Higher cost per bit compared to alternative memory options

Working Principles

The IDT71V016SA15PH8 is a synchronous SRAM that stores and retrieves data using electronic circuits. It operates by receiving address inputs, which specify the location of the desired data, and outputs the corresponding data based on the input signals. The chip enable (CE#), write enable (WE#), and output enable (OE#) inputs control the read and write operations. The memory cells within the IC store data in a volatile manner, meaning the data is lost when power is removed.

Detailed Application Field Plans

The IDT71V016SA15PH8 is commonly used in various applications, including:

1. Computer Systems: Used as cache memory to improve system performance.
2. Networking Equipment: Provides fast data buffering capabilities in routers and switches.
3. Telecommunication Devices: Enables quick data access in communication systems.
4. Industrial Control Systems: Stores critical data for real-time monitoring and control.
5. Automotive Electronics: Utilized in automotive control units for reliable data storage.

Detailed and Complete Alternative Models

1. Samsung K6R4016V1D-JC10: Similar 1M x 16 SRAM with 10ns access time.
2. Micron MT45W8MW16BGX-701 WT:B: Comparable 1M x 16 SRAM with lower standby current.
3. Cypress CY62167EV30LL-45ZSXI: Alternative 1M x 16 SRAM with extended temperature range.

These alternative models offer similar functionality and can be considered as substitutes for the IDT71V016SA15PH8 based on specific requirements and preferences.

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