IDT71V3557SA80BG
Product Overview
- Category: Integrated Circuit (IC)
- Use: Memory device
- Characteristics:
- High-speed synchronous static random-access memory (SRAM)
- Low power consumption
- Large storage capacity
- Package: Ball Grid Array (BGA)
- Essence: Provides high-speed and low-power memory storage for various electronic devices.
- Packaging/Quantity: Available in reels, with a quantity of 250 units per reel.
Specifications
- Memory Type: Synchronous SRAM
- Organization: 256K x 36 bits
- Operating Voltage: 3.3V
- Access Time: 8 ns
- Operating Temperature Range: -40°C to +85°C
- Data Retention Voltage: 2.0V (min)
- Package Dimensions: 13mm x 13mm BGA
Pin Configuration
The IDT71V3557SA80BG has a total of 119 pins. The pin configuration is as follows:
- VDDQ
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- DQ8
- DQ9
- DQ10
- DQ11
- DQ12
- DQ13
- DQ14
- DQ15
- DQ16
- DQ17
- DQ18
- DQ19
- DQ20
- DQ21
- DQ22
- DQ23
- DQ24
- DQ25
- DQ26
- DQ27
- DQ28
- DQ29
- DQ30
- DQ31
- VSSQ
- VDDQ
- /WE#
- /OE#
- /CE#
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- A16
- A17
- A18
- A19
- A20
- A21
- A22
- A23
- A24
- A25
- A26
- A27
- A28
- A29
- A30
- A31
- VSS
- VDD
- CLK
- CKE
- CS#
- RAS#
- CAS#
- WEN#
- OEN#
- LB#
- UB#
- BYTE#
- VSS
- VDD
- DQS0#
- DQS0
- DM0
- VSSDQ
- DQ32
- DQ33
- DQ34
- DQ35
- DQ36
- DQ37
- DQ38
- DQ39
- DQ40
- DQ41
- DQ42
- DQ43
- DQ44
- DQ45
- DQ46
- DQ47
- VSSDQ
- VDDQ
- DQS1#
- DQS1
- DM1
- VSSDQ
- DQ48
- DQ49
- DQ50
- DQ51
- DQ52
- DQ53
- DQ54
- DQ55
- VSSDQ
Functional Features
- High-speed operation allows for quick data access.
- Synchronous design enables efficient communication with the system bus.
- Low power consumption ensures energy efficiency.
- Large storage capacity provides ample memory space for various applications.
- Supports multiple read and write operations simultaneously.
Advantages
- Fast access time enhances overall system performance.
- Low power consumption prolongs battery life in portable devices.
- Large storage capacity accommodates complex data requirements.
- Synchronous design simplifies system integration.
- Multiple read and write operations improve data processing efficiency
기술 솔루션에 IDT71V3557SA80BG 적용과 관련된 10가지 일반적인 질문과 답변을 나열하세요.
Sure! Here are 10 common questions and answers related to the application of IDT71V3557SA80BG in technical solutions:
Q: What is IDT71V3557SA80BG? A: IDT71V3557SA80BG is a specific model of synchronous static RAM (SRAM) manufactured by Integrated Device Technology (IDT).
Q: What is the capacity of IDT71V3557SA80BG? A: IDT71V3557SA80BG has a capacity of 4 Megabits (Mb), which is equivalent to 512 Kilobytes (KB).
Q: What is the operating voltage range for IDT71V3557SA80BG? A: The operating voltage range for IDT71V3557SA80BG is typically between 3.0V and 3.6V.
Q: What is the access time of IDT71V3557SA80BG? A: IDT71V3557SA80BG has an access time of 8 nanoseconds (ns), meaning it takes approximately 8 ns to read or write data.
Q: Can IDT71V3557SA80BG be used in battery-powered devices? A: Yes, IDT71V3557SA80BG can be used in battery-powered devices as long as the operating voltage requirements are met.
Q: Is IDT71V3557SA80BG compatible with standard microcontrollers? A: Yes, IDT71V3557SA80BG is compatible with most standard microcontrollers that support SRAM interfacing.
Q: Does IDT71V3557SA80BG require any external components for operation? A: No, IDT71V3557SA80BG does not require any external components for basic operation. However, additional support circuitry may be needed depending on the specific application.
Q: Can IDT71V3557SA80BG be used in high-speed data processing applications? A: Yes, IDT71V3557SA80BG can be used in high-speed data processing applications due to its relatively fast access time.
Q: Is IDT71V3557SA80BG suitable for use in industrial environments? A: Yes, IDT71V3557SA80BG is designed to operate reliably in industrial temperature ranges and harsh environments.
Q: Are there any known limitations or considerations when using IDT71V3557SA80BG? A: Some considerations include power supply stability, noise immunity, and proper interfacing techniques to ensure reliable operation. It's recommended to refer to the datasheet and application notes provided by IDT for detailed guidelines.