IDT71V3558SA133BQ

Product Overview

Category

The IDT71V3558SA133BQ belongs to the category of Static Random Access Memory (SRAM) chips.

Use

This product is primarily used in electronic devices for storing and retrieving data quickly. It provides high-speed read and write operations, making it suitable for applications that require fast access to data.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile memory
• Reliable performance
• Wide temperature range compatibility

Package

The IDT71V3558SA133BQ is available in a compact and durable package, ensuring easy integration into various electronic systems. The package type is Ball Grid Array (BGA), which offers improved electrical performance and thermal dissipation.

Essence

The essence of the IDT71V3558SA133BQ lies in its ability to provide fast and reliable data storage and retrieval, contributing to the overall performance of electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in quantities of 100 or more.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 512K x 8 bits
• Operating Voltage: 3.3V
• Access Time: 133 nanoseconds
• Data Retention: More than 10 years
• Operating Temperature Range: -40°C to +85°C
• Package Type: Ball Grid Array (BGA)

Detailed Pin Configuration

The IDT71V3558SA133BQ has a total of 48 pins. The pin configuration is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. GND
11. I/O0
12. I/O1
13. I/O2
14. I/O3
15. I/O4
16. I/O5
17. I/O6
18. I/O7
19. CE1
20. CE2
21. WE
22. OE
23. BYTE
24. NC
25. VCCQ
26. VSSQ
27. VSS
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• High-speed read and write operations
• Low power consumption in standby mode
• Easy integration into electronic systems
• Reliable data retention
• Compatibility with a wide range of temperatures

Advantages and Disadvantages

Advantages

• Fast data access
• Low power consumption
• Reliable performance
• Compact package size
• Wide temperature range compatibility

Disadvantages

• Limited storage capacity (512K x 8 bits)
• Higher cost compared to other memory technologies

Working Principles

The IDT71V3558SA133BQ operates based on the principles of static random access memory. It uses flip-flop circuits to store each bit of data, allowing for fast access times. When a read or write operation is initiated, the appropriate address is provided, and the data is accessed from or written to the corresponding memory location.

Detailed Application Field Plans

The IDT71V3558SA133BQ finds applications in various electronic devices and systems, including but not limited to: - Computer systems - Networking equipment - Communication devices - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

1. IDT71V3558S166BQ - Similar to IDT71V3558SA133BQ but with a faster access time of 166 nanoseconds.
2. IDT71V3558S200BQ - Similar to IDT71V3558SA133BQ but with a faster access time of 200 nanoseconds.
3. IDT71V3558S100BQ - Similar to IDT71V3558SA133BQ but with a slower access time of 100 nanoseconds.

These alternative models offer different access times to cater to specific application requirements while maintaining similar characteristics and functionality.

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